Zinc-oxide based epitaxial layers and devices
Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.
1. A method of forming a zinc-oxide based epitaxial layer, the method comprising:
providing a vicinal wurtzite substrate, wherein the vicinal wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal; and
forming a zinc-oxide based epitaxial layer on the vicinal wurtzite substrate using metalorganic chemical vapor deposition.
2. The method of claim 1 , wherein said forming the zinc-oxide based epitaxial layer on the vicinal wurtzite substrate comprises heating the vicinal wurtzite substrate to a temperature between about 400 degrees Celsius and about 900 degrees Celsius.
3. The method of claim 2 , wherein said heating the vicinal wurtzite substrate comprises heating the vicinal wurtzite substrate to a temperature between about 550 degrees Celsius and about 650 degrees Celsius.
4. The method of claim 1 , wherein the vicinal wurtzite substrate is a zinc-oxide based substrate.
5. The method of claim 1 , wherein the metalorganic chemical vapor deposition supersaturation ratio of Group VI elements to Group II elements is less than 8000.
6. The method of claim 1 , wherein the zinc-oxide based epitaxial layer further comprises at least one element selected from the group consisting of gold, silver, and potassium.
7. The method of claim 1 , wherein the vicinal wurtzite substrate has an off-cut angle from the m-plane ranging from about 2 degrees to about 15 degrees.
8. The method of claim 1 , wherein the vicinal wurtzite substrate comprises an m-plane or vicinal m-plane wurtzite substrate.
9. The method of claim 1 , wherein the vicinal wurtzite substrate comprises a Group III-nitride.
10. The method of claim 1 , further comprising slicing a hexagonal crystal of the vicinal wurtzite substrate to create a slice offset from the principal plane of the hexagonal crystal prior to said forming the zinc-oxide based epitaxial layer on the vicinal wurtzite substrate.
11. The method of claim 1 , wherein the vicinal wurtzite substrate is electrically-conductive.
12. The method of claim 1 , wherein the vicinal wurtzite substrate is electrically-insulative.
13. The method of claim 1 , wherein said forming the zinc-oxide based epitaxial layer on the vicinal wurtzite substrate comprises introducing a first gas including zinc and a second gas including oxygen to the vicinal wurtzite substrate.
14. A device having an epitaxial layer produced according to the method of claim 1 .
15. A method of forming a zinc-oxide based epitaxial layer, the method comprising:
providing a wurtzite substrate, wherein the wurtzite substrate is a zinc-oxide based substrate and
forming a zinc-oxide based epitaxial layer on the wurtzite substrate using metalorganic chemical vapor deposition.
16. The method of claim 15 , further comprising heating the wurtzite substrate to a temperature between about 400 degrees Celsius and about 900 degrees Celsius.
17. The method of claim 15 , wherein the metalorganic chemical vapor deposition supersaturation ratio of Group VI elements to Group II elements is less than 8000.
18. The method of claim 15 , wherein the wurtzite substrate comprises a semi-polar wurtzite substrate, and wherein the semi-polar wurtzite substrate has a deposition surface parallel or substantially parallel to a plane belonging to the {11-22} or {10-12} plane families.
19. A device having an epitaxial layer produced according to the method of claim 15 .
20. A method of forming a zinc-oxide based epitaxial layer, the method comprising:
providing a wurtzite substrate, wherein the wurtzite substrate is a zinc-oxide based substrate; and
forming a zinc-oxide based epitaxial layer on the wurtzite substrate using metalorganic chemical vapor deposition, wherein the zinc-oxide based epitaxial layer further comprises at least one element selected from the group consisting of gold, silver, and potassium.
21. An apparatus comprising:
a vicinal wurtzite substrate, wherein the vicinal wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal; and
a zinc-oxide based epitaxial layer deposited on the vicinal wurtzite substrate.
22. The apparatus of claim 21 , wherein the vicinal wurtzite substrate comprises an m-plane or vicinal m-plane wurtzite substrate.
23. The apparatus of claim 22 , wherein the vicinal wurtzite substrate has an off-cut angle from the m-plane ranging from about 2 degrees to about 15 degrees.
24. The apparatus of claim 21 , wherein the vicinal wurtzite substrate comprises a Group III-nitride.
25. The apparatus of claim 21 , wherein the vicinal wurtzite substrate comprises a zinc-oxide based material.
26. The apparatus of claim 21 , wherein the zinc-oxide based epitaxial layer comprises at least one element selected from the group consisting of gold, silver, and potassium.
27. An apparatus comprising:
a semi-polar wurtzite substrate, wherein the semi-polar wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal, and wherein the semi-polar wurtzite substrate comprises at least one plane selected from the group consisting of a (10-11) plane, a (10-1-1) plane, (10-12), a (10-1-2) plane, a (11-2-1) plane, a (11-21) plane, a (11-2-2) plane, and a (11-22) plane; and
a zinc-oxide based epitaxial layer deposited on the semi-polar wurtzite substrate.
28. The apparatus of claim 27 , wherein the semi-polar wurtzite substrate comprises a deposition surface parallel or substantially parallel to a plane belonging to the {11-22} or {10-12} plane families.