Semiconductor module

1. A semiconductor module, comprising:

a semiconductor device comprising:

a semiconductor substrate,

a first electrode formed on one surface of the semiconductor substrate, and

a second electrode formed on a surface of the semiconductor substrate opposite to the one surface;

a first conductive member being in contact with the first electrode;

a second conductive member being in contact with the second electrode;

a third conductive member being in contact with the second conductive member and extending along the first conductive member; and

an insulating member insulating between the first conductive member and the third conductive member,

wherein

the third conductive member is fixed to the first conductive member and the second conductive member by being sandwiched between the first conductive member and the second conductive member and extends to outer side of the second conductive member,

the semiconductor module further comprises a cylinder formed of an insulator, encompassing the semiconductor device, fixed to the first conductive member, and having a first thread groove formed on an outer peripheral surface thereof,

the semiconductor device is fixed to the first conductive member and the second conductive member by being sandwiched between the first conductive member and the second conductive member and is disposed at a position inside the cylinder, and

a second thread groove is formed on the second conductive member, and the second conductive member is fixed to the cylinder by an engagement of the first thread groove and the second thread groove.

2. A semiconductor module of claim 1 , wherein

a first engaging portion including at least one of a concavity or a convexity is formed on the outer peripheral surface of the cylinder,

the third conductive member comprises a penetrating hole,

a second engaging portion including at least one of a concavity or a convexity is formed on an inner surface of the penetrating hole, and

the cylinder is inserted into the penetrating hole of the third conductive member in a state where the first engaging portion engages with the second engaging portion.

3. A semiconductor module of claim 1 ,

the semiconductor device further comprising a third electrode formed on the one surface of the semiconductor substrate, and through which a smaller current than in the first electrode and the second electrode flows, and

the semiconductor module further comprising a wiring member connected to the third electrode and penetrating the first conductive member in a state of being insulated from the first conductive member.

4. A semiconductor module of claim 3 , wherein

a concave portion is formed on a back surface of the first conductive member which is a surface opposite to a front surface of the first conductive member being in contact with the first electrode,

the wiring member penetrates the first conductive member at a position at which the concave portion is formed and extends along a bottom surface of the concave portion within the concave portion, and

the wiring member within the concave portion is covered with an insulator.

5. A semiconductor module of claim 4 , wherein

a part of the back surface of the first conductive member on which the concave portion is not formed and a surface of the insulator within the concave portion form a consecutive flat plane.

6. A semiconductor module of claim 1 , wherein

the insulating member is directly connected to the cylinder and is directly sandwiched by the first conducting member and the third conducting member,

the third conducting member is directly sandwiched by the insulating member and the second conducting member.