Semiconductor device and manufacturing method thereof
View Patent ↗An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the step of:
forming an oxide semiconductor layer including a region to become a channel region of the transistor; and
etching the oxide semiconductor layer so that the oxide semiconductor layer has a depression,
wherein the oxide semiconductor layer has a crystalline state and comprises indium, gallium and zinc, and
wherein the oxide semiconductor layer having the crystalline state and comprising indium, gallium and zinc is formed by sputtering.
2. The method according to claim 1 , wherein the oxide semiconductor layer is formed over and in contact with an oxide insulating film.
3. The method according to claim 1 , wherein the oxide semiconductor layer has a state in which both an amorphous state and the crystalline state exist.
4. The method according to claim 1 , wherein the oxide semiconductor layer is formed over a glass substrate.
5. The method according to claim 1 , wherein the region to become a channel region of the oxide semiconductor layer is added with an impurity imparting p-type conductivity.
6. The method according to claim 1 , further comprising the step of forming a passivation film comprising aluminum oxynitride or aluminum oxide over at least the oxide semiconductor layer.
7. The method according to claim 1 , wherein the oxide semiconductor layer is heated in an atmosphere comprising oxygen.
8. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
forming an oxide semiconductor layer including a region to become a channel region of the transistor;
etching the oxide semiconductor layer so that the oxide semiconductor layer has a depression; and
forming a pixel electrode in electrical contact with a source or drain of the transistor,
wherein the oxide semiconductor layer has a crystalline state and comprises indium, gallium and zinc, and
wherein the oxide semiconductor layer having the crystalline state and comprising indium, gallium and zinc is formed by sputtering.
9. The method according to claim 8 , wherein the oxide semiconductor layer is formed over and in contact with an oxide insulating film.
10. The method according to claim 8 , wherein the oxide semiconductor layer has a state in which both an amorphous state and the crystalline state exist.
11. The method according to claim 8 , wherein the oxide semiconductor layer is formed over a glass substrate.
12. The method according to claim 8 , wherein the region to become a channel region of the oxide semiconductor layer is added with an impurity imparting p-type conductivity.
13. The method according to claim 8 , further comprising the step of forming a passivation film comprising aluminum oxynitride or aluminum oxide over at least the oxide semiconductor layer.
14. The method according to claim 8 , wherein the oxide semiconductor layer is heated in an atmosphere comprising oxygen.
15. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
forming a gate electrode over a substrate;
forming an insulating film over the gate electrode;
forming an oxide semiconductor layer including a region to become a channel region of the transistor over the gate electrode with the insulating film interposed between the oxide semiconductor layer and the gate electrode; and
etching the oxide semiconductor layer so that the oxide semiconductor layer has a depression,
wherein the oxide semiconductor layer has a crystalline state and comprises indium, gallium and zinc, and
wherein the oxide semiconductor layer having the crystalline state and comprising indium, gallium and zinc is formed by sputtering.
16. The method according to claim 15 , wherein the oxide semiconductor layer is formed over and in contact with the insulating film.
17. The method according to claim 15 , wherein the oxide semiconductor layer has a state in which both an amorphous state and the crystalline state exist.
18. The method according to claim 15 , wherein the oxide semiconductor layer is formed over a glass substrate.
19. The method according to claim 15 , wherein the region to become a channel region of the oxide semiconductor layer is added with an impurity imparting p-type conductivity.
20. The method according to claim 15 , further comprising the step of forming a passivation film comprising aluminum oxynitride or aluminum oxide over at least the oxide semiconductor layer.
21. The method according to claim 15 , wherein the oxide semiconductor layer is heated in an atmosphere comprising oxygen.
22. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the step of:
forming an oxide semiconductor layer including a region to become a channel region of the transistor;
forming a conductive film over the oxide semiconductor layer; and
etching the oxide semiconductor layer so that the oxide semiconductor layer has a depression,
wherein the oxide semiconductor layer has a crystalline state and comprises indium, gallium and zinc, and
wherein the oxide semiconductor layer having the crystalline state and comprising indium, gallium and zinc is formed by sputtering.
23. The method according to claim 22 , wherein the oxide semiconductor layer has a state in which both an amorphous state and the crystalline state exist.
24. The method according to claim 22 , wherein the oxide semiconductor layer is formed over a glass substrate.
25. The method according to claim 22 , wherein the region to become a channel region of the oxide semiconductor layer is added with an impurity imparting p-type conductivity.
26. The method according to claim 22 , further comprising the step of forming a passivation film comprising aluminum oxynitride or aluminum oxide over at least the oxide semiconductor layer.
27. The method according to claim 22 , wherein the oxide semiconductor layer is heated in an atmosphere comprising oxygen.