Cyclic metal amides and vapor deposition using them
Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO 2 , films were deposited by reaction of a cyclic tin amide vapor and H 2 O 2 or NO 2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO 2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H 2 S deposited tin monosulfide, SnS, a material suitable for solar cells.
1. A cyclic amide represented by the general formula
wherein M is tin or lead, and wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 ,R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , and R 22 are selected independently from hydrogen, alkyl, cycloalkyl, alkenyl, alkynyl, trialkylsilyl, fluoroalkyl groups or alkyl groups substituted by other non-metal atoms or groups, and wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , and R 22 are independently selected to provide a cyclic amide capable of vaporizing prior to decomposition.
2. The cyclic amide of claim 1 , wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , and R 22 are each selected independently from the group of hydrogen and alkyl groups containing 1 to 4 carbon atoms.
3. The cyclic amide of claim 1 , wherein R 10 and R 13 are methyl groups and R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , and R 22 are hydrogen atoms, represented by the formula
4. The cyclic amide of claim 3 , wherein M is tin.
5. The cyclic amide of claim 3 , wherein M is lead.
6. The cyclic amide of claim 1 , wherein M is tin.
7. The cyclic amide of claim 1 , wherein M is lead.
8. A process comprising depositing the cyclic amide of claim 1 to form a solid material comprising tin or lead.
9. The process of claim 8 , further comprising alternately depositing a second reactant after each deposition of the cyclic amide of claim 1 .
10. The process of claim 8 , wherein the cyclic amide of claim 1 is deposited with a second reactant.
11. The process of claim 8 , wherein the solid material is a metal.
12. The process of claim 8 , wherein the solid material is a metal oxide.
13. The process of claim 8 , wherein the solid material is a metal sulfide.
14. The process of claim 8 , wherein the solid material is a metal selenide.
15. The process of claim 8 , wherein the solid material is a metal nitride.
16. The process of claim 8 , wherein the solid material is a metal phosphide.
17. The process of claim 8 , wherein the solid material is a metal carbide.
18. The process of claim 8 , wherein the solid material is a metal silicide.
19. The process of claim 8 , wherein the solid material is a metal boride.
20. The process of claim 8 , wherein the solid material is a component of a transistor device.
21. The process of claim 8 , wherein the solid material is a component of a display device.
22. The process of claim 8 , wherein the solid material is a component of a solar cell.