IP Library Granted Patent US 8,797,127
Granted Patent B2
US 8,797,127 · App. 12/951,492 · Granted Aug 5, 2014

MEMS switch with reduced dielectric charging effect

Inventors: Chia-Hua Chu (Zhubei, TW); Chung-Hsien Lin (Hsinchu, TW); Chun-Wen Cheng (Zhubei, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
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Quick Facts
Patent No.
US 8,797,127
App. No.
12/951,492
Granted
Aug 5, 2014
Kind
B2
Abstract

The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.

Claims (41)

1. A micro-electro-mechanical systems (MEMS) switch, comprising:

a substrate;

a first dielectric layer disposed above the substrate;

a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer;

a second dielectric layer enclosing the bottom signal electrode; and

a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump, and

at least one support member that comprises the first dielectric layer and is directly below the top actuation electrode.

2. The MEMS switch of claim 1 , wherein the bump is disposed between the bottom signal electrode and the bottom actuation electrode.

3. The MEMS switch of claim 1 , wherein the bump is comprised of a metal.

4. The MEMS switch of claim 1 , wherein the bump is comprised of a dielectric layer disposed above a metal layer.

5. The MEMS switch of claim 1 , wherein the top actuation electrode is electrically coupled to the bump by at least one via and one line.

6. The MEMS switch of claim 5 , wherein the at least one via is formed through the at least one support member.

7. The MEMS switch of claim 1 , wherein the top actuation electrode and the top signal electrode are drawn toward the bottom actuation electrode and the bottom signal electrode, respectively, upon application of a control voltage to the bottom actuation electrode, allowing a signal to propagate between the top and bottom signal electrodes.

8. The MEMS switch of claim 1 , further comprising a metal contact disposed above the second dielectric layer, disposed below the top signal electrode, and electrically coupled to the bottom signal electrode.

9. The MEMS switch of claim 1 , wherein the at least one support member contacts an end of the top actuation electrode.

10. A micro-electro-mechanical systems (MEMS) switch, comprising:

a substrate;

a first dielectric layer disposed above the substrate;

a bottom signal electrode disposed between two bumps, between two bottom actuation electrodes, and above the first dielectric layer between the at least two support members;

a second dielectric layer enclosing the bottom signal electrode;

a movable member including a top signal electrode disposed above the bottom signal electrode and disposed between two top actuation electrodes, and

at least two support members that comprise the first dielectric layer and are each directly below a respective top actuation electrode;

wherein each of the top actuation electrodes is disposed above a respective bottom actuation electrode and a respective bump, and

wherein each of the top actuation electrodes is electrically coupled to the respective bump by at least one via and one line through the first dielectric layer.

11. The MEMS switch of claim 10 , wherein each of the bumps is disposed between a bottom signal electrode and a bottom actuation electrode.

12. The MEMS switch of claim 10 , wherein each of the bumps is comprised of a metal.

13. The MEMS switch of claim 10 , wherein each of the bumps is comprised of a dielectric layer disposed above a metal layer.

14. The MEMS switch of claim 10 , wherein a top actuation electrode is drawn toward a respective bottom actuation electrode and the top signal electrode is drawn toward the bottom signal electrode upon application of a control voltage to a bottom actuation electrode, allowing a signal to propagate between the top and bottom signal electrodes.

15. The MEMS switch of claim 10 , further comprising a metal contact disposed above the second dielectric layer, disposed below the top signal electrode, and electrically coupled to the bottom signal electrode.

16. The MEMS switch of claim 10 , wherein the at least two support members contact an end of the two top actuation electrodes.

17. The MEMS switch of claim 10 , wherein the at least one via is formed through at least one of the support members.

18. A micro-electro-mechanical systems (MEMS) switch, comprising:

a substrate;

a first dielectric layer above the substrate;

a bottom signal electrode, a bump, and a bottom actuation electrode above the first dielectric layer;

a second dielectric layer enclosing the bottom signal electrode;

a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump;

a conductive component for electrically coupling the top actuation electrode to the bump; and

at least one support member that comprises the first dielectric layer and is directly below the top actuation electrode.

19. The MEMS switch of claim 18 , wherein the at least one support member contacts an end of the top actuation electrode.

20. The MEMS switch of claim 18 , wherein the top actuation electrode is electrically coupled to the bump by at least one via through the at least one support member.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2010
From: CHU, CHIA-HUA; LIN, CHUNG-HSIEN; CHENG, CHUN-WEN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 025391/0581 →
Continuity (1)
Related Publication 20120125747A1 · May 24, 2012