TFT-LCD array substrate and manufacturing method thereof

1. A thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:

a plurality of gate lines and a plurality of data lines on a substrate, and

a plurality of pixel regions defined by the gate lines and the data lines, each of the pixel regions comprising a pixel electrode and a thin film transistor serving as a switch element,

wherein a gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines; and

wherein the thin film transistor is a top gate type transistor, and the gate electrode of the thin film transistor and the pixel electrode are formed by a same transparent conductive film.

2. The TFT-LCD array substrate according to claim 1 , wherein an active layer of the thin film transistor is formed on the substrate, a source electrode of the thin film transistor is formed on the active layer and connected with corresponding data line, a drain electrode of the thin film transistor is formed on the active layer and opposites to the source electrode, and a first insulating layer is formed on the source electrode and the drain electrode to cover the entirety of the substrate.

3. The TFT-LCD array substrate according to claim 2 , wherein the gate electrode and the pixel electrode are formed on the first insulating layer, and the pixel electrode is connected with the drain electrode through a first via hole in the first insulating layer.

4. The TFT-LCD array substrate according to claim 3 , wherein the gate lines and the connection electrode of each pixel region are formed on the first insulating layer, and one end of the connection electrode is positioned over the gate electrode and the other end thereof is connected with corresponding gate line.

5. The TFT-LCD array substrate according to claim 2 , wherein a blocking layer is formed on the substrate, and the active layer is formed on the blocking layer.

6. The TFT-LCD array substrate according to claim 1 , wherein the thickness of the transparent conductive film is 300-600 Å.

7. The TFT-LCD array substrate according to claim 1 , wherein the width of the connection electrode is smaller than that of the gate electrode.

8. A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:

Step 21 of depositing a light-blocking film on a substrate and forming a blocking layer by patterning the light-blocking film;

Step 22 of depositing a semiconductor film, a doped semiconductor film and a source/drain metal film on the substrate after the Step 21 , and forming an active layer, a data line, a source electrode and a drain electrode by patterning the stack of the above layers;

Step 23 of depositing a first insulating layer on the substrate after the Step 22 , and forming a first via hole by patterning the first insulating layer, wherein the first via hole is positioned at the drain electrode; and

Step 24 of depositing a transparent conductive film and a gate metal film on the substrate after the Step 23 , and forming a gate electrode, a pixel electrode, a gate line and a connection electrode by patterning the stack of the transparent conductive film and the gate metal film, wherein the pixel electrode is connected with the drain electrode through the first via hole, the gate electrode formed by the transparent conductive film is positioned over the blocking layer, and one end of the connection electrode is provided on and contacts the gate electrode and the other end thereof is connected with the gate line.

9. The method of manufacturing the TFT-LCD array substrate according to claim 8 , wherein the Step 22 comprises: patterning the stack of the semiconductor film, the doped semiconductor film and the source/drain metal film by using a half-tone mask or a gray-tone mask.

10. The method of manufacturing the TFT-LCD array substrate according to claim 8 , wherein the Step 24 comprises: patterning the stack of the transparent conductive film and the gate metal film by using a half-tone mask or a gray-tone mask.