High-efficiency diode laser
A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.
1. A diode laser having:
a first n-conducting cladding layer,
a first n-conducting waveguide layer, which is arranged on the first cladding layer,
an active layer, which is suitable for generating radiation and which is arranged on the first waveguide layer,
a second p-conducting waveguide layer, which is arranged on the active layer, and
a second p-conducting cladding layer, which is arranged on the second waveguide layer,
wherein the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm,
wherein
the active layer, the first cladding layer, the second cladding layer, the first waveguide layer and the second waveguide layer are designed in such a manner that the maximum mode intensity of the fundamental mode is in a region outside the active layer, and wherein the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.
2. The diode laser according to claim 1 ,
wherein
the layer thickness of the active layer is less than 80 nm.
3. The diode laser according to claim 1
wherein
the active layer at least one quantum well and the ratio that the sum of the thicknesses of the at least one quantum well bears to the optical confinement factor (Γ) is less than 4 μm.
4. The diode laser according to claim 1 ,
wherein
the active layer has at least one well layer.
5. The diode laser according to claim 1 ,
wherein
the layer thickness of the second waveguide layer is less than 100 nm.
6. The diode laser according to claim 1 ,
wherein
at least one of the waveguide layers has a refractive-index gradient.
7. The diode laser according to claim 1 ,
wherein
the layer thickness of the first cladding layer is greater than 1 μm.
8. The diode laser according to claim 1 ,
wherein
the ratio that the layer thickness of the first cladding layer bears to the layer thickness of the first waveguide layer is greater than 1.5.
9. The diode laser according to claim 7 ,
wherein
the ratio that the layer thickness of the first cladding layer bears to the layer thickness of the first waveguide layer is greater than 1.7.
10. The diode laser according to claim 1 ,
wherein
a reflecting facet for reflecting the radiation emitted by the active layer and an exit facet for reflecting and decoupling the radiation emitted by the active layer are provided, wherein both the reflecting facet and the exit facet are arranged in the edge region of the active layer and wherein the reflecting facet and the exit facet are arranged opposite each other with respect to the active layer.
11. The diode laser according to claim 1 ,
wherein
the active layer has at least one quantum well.
12. The diode laser according to claim 1 ,
wherein
the diode laser is designed as an edge-emitting diode laser or as an optical amplifier.
13. The diode laser according to claim 1 ,
wherein
the diode laser is designed as a CW diode laser.