IP Library Granted Patent US 8,802,496
Granted Patent B2
US 8,802,496 · App. 13/958,989 · Granted Aug 12, 2014

Substrate for semiconductor package and method of manufacturing thereof

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Quick Facts
Patent No.
US 8,802,496
App. No.
13/958,989
Granted
Aug 12, 2014
Kind
B2
Abstract

Disclosed is a substrate for a semiconductor package in which leakage of radiation noise from a gap between a semiconductor element and a mounting substrate can be prevented. The substrate for the semiconductor package includes a coplanar waveguide including a signal and ground electrodes on the mounting substrate, the signal electrode flip-chip connected to the semiconductor element, the ground electrodes arranged on both sides of the signal electrode with intervals therebetween. A step part is formed in the ground electrodes in an outer circumferential part of a mounting region of the semiconductor element, the step part having a larger distance between upper surfaces of the mounting substrate and the ground electrode in the outer circumferential part of the mounting region than such distance in the mounting region, and an insulator for covering the signal electrode in the outer circumferential part of the mounting region is formed.

Claims (8)

1. A method of manufacturing a semiconductor package comprising:

patterning an electrode formed on a mounting substrate having a semiconductor element mounted thereon to form a coplanar waveguide including a signal electrode and ground electrodes arranged on both sides of the signal electrode with intervals therebetween;

forming a mask on the ground electrode in an outer circumferential part of a mounting region of the semiconductor element and etching the ground electrode in a region where the mask is not formed to form a step part having a larger distance between an upper surface of the mounting substrate and an upper surface of the ground electrode in the outer circumferential part of the mounting region than such distance in the mounting region;

forming an insulator that covers the signal electrode in the outer circumferential part of the mounting region;

flip-chip connecting the semiconductor element to the mounting substrate with a bump therebetween to mount the semiconductor element; and

forming a conductor that fills a gap between the semiconductor element and the mounting substrate based on the ground electrode and the insulator so as not to contact the signal electrode.

2. The method of manufacturing the semiconductor package according to claim 1 , comprising filling a gap between the semiconductor element and the mounting substrate with underfill resin after flip-chip connecting the semiconductor element to the mounting substrate with the bump therebetween to mount the semiconductor element and before forming the conductor that fills the gap between the semiconductor element and the mounting substrate based on the ground electrode and the insulator so as not to contact the signal electrode.

3. The method of manufacturing the semiconductor package according to claim 1 , comprising forming the conductor by a printed method using conductive paste when forming the conductor that fills the gap between the semiconductor element and the mounting substrate based on the ground electrode and the insulator so as not to contact the signal electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2015
From: NEC CORPORATION
To: GODO KAISHA IP BRIDGE 1
Reel/Frame 034834/0806 →