Radiation detector device
A radiation detector device is disclosed that includes a scintillator including a scintillator crystal and a hybrid photodetector (HPD) coupled to the scintillator. The HPD includes an electron tube having an input window and a photocathode adapted to emit photoelectrons when light passing through the input window strikes the photocathode. Further, the hybrid photodetector includes an electron detector adapted to receive photoelectrons emitted by the photocathode. The electron detector comprises a semiconductor material characterized by a bandgap of at least 2.15 eV.
1. A radiation detector device, comprising:
a scintillator including a scintillator crystal; and
a hybrid photodetector (HPD) coupled to the scintillator, the HPD including:
an electron tube having an input window;
a photocathode adapted to emit photoelectrons when light from the scintillator crystal passes through the input window and strikes the photocathode; and
an electron detector adapted to receive photoelectrons emitted by the photocathode, wherein the electron detector comprises a semiconductor material characterized by a bandgap of at least 2.15 eV,
wherein the radiation detector device is a well-logging detector device.
2. The radiation detector device of claim 1 , wherein the electron detector comprises a semiconductor material characterized by a bandgap of from approximately 2.15 eV to approximately 8 eV.
3. The radiation detector device of claim 1 , wherein the electron detector comprises silicon carbide, zinc sulfide, gallium (III) nitride, diamond, aluminum nitride, zinc selenide, or thallium bromide.
4. The radiation detector device of claim 1 , wherein the photocathode comprises a bialkali semiconductor material, a multialkali semiconductor material, or a III-V semiconductor material.
5. The radiation detector device of claim 1 , further comprising at least one electronic device adapted to receive current output from the electron detector, to convert the current to electrical pulses, and to send at least some of the electrical pulses to a photon counter.
6. The radiation detector device of claim 5 , wherein the photon counter is adapted to count photons emitted by the scintillator crystal based on a pulse height of each electrical pulse received by the photon counter.
7. The radiation detector device of claim 5 , wherein the at least one electronic device is adapted to eliminate electrical pulses having an amplitude lower than a minimum amplitude before sending the at least some of the electrical pulses to the photon counter.
8. The radiation detector device of claim 7 , wherein the electrical pulses having an amplitude lower than a minimum amplitude correspond to dark current pulses, noise pulses, or a combination thereof.
9. The radiation detector device of claim 1 , wherein the electron tube comprises a vacuum level of less that or equal to 10 −4 Torr.
10. A hybrid photodetector, comprising:
an electron tube having an input window;
a photocathode adapted to emit photoelectrons when light passing through the input window strikes the photocathode; and
an electron detector adapted to receive photoelectrons emitted by the photocathode, wherein the electron detector comprises a semiconductor material characterized by a bandgap of at least 2.15 eV,
wherein the hybrid photodetector does not include a dynode.
11. The hybrid photodetector of claim 10 , wherein the electron detector comprises a semiconductor material characterized by a bandgap of from approximately 2.15 eV to approximately 8 eV.
12. The hybrid photodetector of claim 10 , wherein the electron detector comprises silicon carbide, zinc sulfide, gallium (III) nitride, diamond, aluminum nitride, zinc selenide, or thallium bromide.
13. The hybrid photodetector of claim 12 , wherein the electron detector comprises silicon carbide.
14. The hybrid photodetector of claim 12 , wherein the electron detector comprises cubic zinc sulfide or hexagonal zinc sulfide.
15. The hybrid photodetector of claim 12 , wherein the electron detector comprises wurtzite-phase aluminum nitride.
16. The hybrid photodetector of claim 10 , wherein the photocathode comprises a bialkali semiconductor material, a multialkali semiconductor material, or a III-IV semiconductor material.
17. The hybrid photodetector of claim 16 , wherein the photocathode comprises sodium-potassium-antimony (Na—K—Sb).
18. The hybrid photodetector of claim 16 , wherein the photocathode comprises sodium-potassium-antimony-cesium (Na—K—Sb—Cs).
19. The hybrid photodetector of claim 16 , wherein the photocathode comprises gallium (II) arsenide (GaAs) or aluminum arsenide (AlAs).
20. The hybrid photodetector of claim 16 , wherein the photocathode comprises cesium oxide.
21. The hybrid photodetector of claim 10 , wherein a first voltage is applied to the photocathode and wherein photoelectons emitted by the photocathode are accelerated by the first voltage to strike the electron detector.