IP Library › Granted Patent US 8,803,164
Granted Patent B2
US 8,803,164 · App. 13/193,741 · Granted Aug 12, 2014

Solid-state image sensing device and semiconductor display device

Inventors: Yoshiyuki Kurokawa (Sagamihara, JP); Takayuki Ikeda (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,803,164
App. No.
13/193,741
Granted
Aug 12, 2014
Kind
B2
Abstract

To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors.

Claims (150)

1. A semiconductor device comprising:

a light-blocking film comprising a first opening, a second opening, and a third opening;

a first photosensor comprising a first photodiode;

a second photosensor comprising a second photodiode;

a third photosensor comprising a third photodiode;

a fourth photosensor comprising a fourth photodiode;

a fifth photosensor comprising a fifth photodiode; and

a sixth photosensor comprising a sixth photodiode,

wherein the first photodiode corresponds to the first opening,

wherein the second photodiode corresponds to the second opening,

wherein the third photodiode corresponds to the third opening,

wherein the first opening, the second opening, and the third opening are arranged in this order in a first direction,

wherein an area of the first opening is larger than an area of the second opening,

wherein the area of the second opening is larger than an area of the third opening,

wherein the light-blocking film comprises a fourth opening, a fifth opening, and a sixth opening,

wherein the fourth photodiode corresponds to the fourth opening,

wherein the fifth photodiode corresponds to the fifth opening,

wherein the sixth photodiode corresponds to the sixth opening,

wherein the fourth opening, the fifth opening, and the sixth opening are arranged in this order in a second direction,

wherein an area of the fourth opening is larger than an area of the fifth opening,

wherein the area of the fifth opening is larger than an area of the sixth opening, and

wherein the first direction and the second direction are parallel and opposite to each other.

2. The semiconductor device according to claim 1 , further comprising:

a seventh photosensor comprising a seventh photodiode;

an eighth photosensor comprising an eighth photodiode; and

a ninth photosensor comprising a ninth photodiode,

wherein the light-blocking film comprises a seventh opening, an eighth opening, and a ninth opening,

wherein the seventh photodiode corresponds to the seventh opening,

wherein the eighth photodiode corresponds to the eighth opening,

wherein the ninth photodiode corresponds to the ninth opening,

wherein the seventh opening, the eighth opening, and the ninth opening are arranged in this order in a third direction,

wherein an area of the seventh opening is larger than an area of the eighth opening,

wherein the area of the eighth opening is larger than an area of the ninth opening, and

wherein the first direction and the third direction are different from each other.

3. The semiconductor device according to claim 2 ,

wherein the first direction and the third direction are orthogonal to each other.

4. The semiconductor device according to claim 3 ,

wherein at least one of the first photosensor, the second photosensor, the third photosensor, and the fourth photosensor comprises a transistor comprising a channel formation region comprising an oxide semiconductor.

5. The semiconductor device according to claim 1 , further comprising:

a display element comprising a liquid crystal element and a switching element.

6. The semiconductor device according to claim 5 , further comprising:

a seventh photosensor comprising a seventh photodiode;

an eighth photosensor comprising an eighth photodiode; and

a ninth photosensor comprising a ninth photodiode,

wherein the light-blocking film comprises a seventh opening, an eighth opening, and a ninth opening,

wherein the seventh photodiode corresponds to the seventh opening,

wherein the eighth photodiode corresponds to the eighth opening,

wherein the ninth photodiode corresponds to the ninth opening,

wherein the seventh opening, the eighth opening, and the ninth opening are arranged in this order in a third direction,

wherein an area of the seventh opening is larger than an area of the eighth opening,

wherein the area of the eighth opening is larger than an area of the ninth opening, and

wherein the first direction and the third direction are different from each other.

7. The semiconductor device according to claim 6 ,

wherein the first direction and the third direction are orthogonal to each other.

8. The semiconductor device according to claim 7 ,

wherein at least one of the first photosensor, the second photosensor, the third photosensor, the fourth photosensor, and the display element comprises a transistor comprising a channel formation region comprising an oxide semiconductor.

9. A semiconductor device comprising:

a light-blocking film comprising a first opening, a second opening, and a third opening;

a first photosensor comprising a first photodiode;

a second photosensor comprising a second photodiode;

a third photosensor comprising a third photodiode;

a fourth photosensor comprising a fourth photodiode;

a fifth photosensor comprising a fifth photodiode; and

a sixth photosensor comprising a sixth photodiode,

wherein the first photodiode corresponds to the first opening,

wherein the second photodiode corresponds to the second opening,

wherein the third photodiode corresponds to the third opening,

wherein the first opening, the second opening, and the third opening are arranged in this order in a first direction,

wherein an area of the first opening is larger than an area of the second opening,

wherein the area of the second opening is larger than an area of the third opening,

wherein the first photosensor is configured to detect first light incident from an object to the first photodiode through the first opening,

wherein the second photosensor is configured to detect second light incident from the object to the second photodiode through the second opening,

wherein the third photosensor is configured to detect third light incident from the object to the third photodiode through the third opening,

wherein an intensity of the first light is higher than an intensity of the second light and an intensity of the third light,

wherein position data of the object is obtained on the basis of a position of the first photosensor and a position of the first opening,

wherein the light-blocking film comprises a fourth opening, a fifth opening, and a sixth opening,

wherein the fourth photodiode corresponds to the fourth opening,

wherein the fifth photodiode corresponds to the fifth opening,

wherein the sixth photodiode corresponds to the sixth opening,

wherein the fourth opening, the fifth opening, and the sixth opening are arranged in this order in a second direction,

wherein an area of the fourth opening is larger than an area of the fifth opening,

wherein the area of the fifth opening is larger than an area of the sixth opening,

wherein the first direction and the second direction are parallel and opposite to each other,

wherein the fourth photosensor is configured to detect fourth light incident from the object to the fourth photodiode through the fourth opening,

wherein the fifth photosensor is configured to detect fifth light incident from the object to the fifth photodiode through the fifth opening,

wherein the sixth photosensor is configured to detect sixth light incident from the object to the sixth photodiode through the sixth opening,

wherein an intensity of the fourth light is higher than an intensity of the fifth light and an intensity of the sixth light, and

wherein the position data of the object is obtained on the basis of the position of the first photosensor, the position of the first opening, a position of the fourth photosensor, and a position of the fourth opening.

10. The semiconductor device according to claim 9 , further comprising:

a seventh photosensor comprising a seventh photodiode;

an eighth photosensor comprising an eighth photodiode; and

a ninth photosensor comprising a ninth photodiode,

wherein the light-blocking film comprises a seventh opening, an eighth opening, and a ninth opening,

wherein the seventh photodiode corresponds to the seventh opening,

wherein the eighth photodiode corresponds to the eighth opening,

wherein the ninth photodiode corresponds to the ninth opening,

wherein the seventh opening, the eighth opening, and the ninth opening are arranged in this order in a third direction,

wherein an area of the seventh opening is larger than an area of the eighth opening,

wherein the area of the eighth opening is larger than an area of the ninth opening,

wherein the first direction and the third direction are different from each other,

wherein the seventh photosensor is configured to detect seventh light incident from the object to the seventh photodiode through the seventh opening,

wherein the eighth photosensor is configured to detect eighth light incident from the object to the eighth photodiode through the eighth opening,

wherein the ninth photosensor is configured to detect ninth light incident from the object to the ninth photodiode through the ninth opening,

wherein an intensity of the seventh light is higher than an intensity of the eighth light and an intensity of the ninth light, and

wherein the position data of the object is obtained on the basis of the position of the first photosensor, the position of the first opening, the position of the fourth photosensor, the position of the fourth opening, a position of the seventh photosensor, and a position of the seventh opening.

11. The semiconductor device according to claim 10 ,

wherein the first direction and the third direction are orthogonal to each other.

12. The semiconductor device according to claim 11 ,

wherein at least one of the first photosensor, the second photosensor, the third photosensor, and the fourth photosensor comprises a transistor comprising a channel formation region comprising an oxide semiconductor.

13. A semiconductor device comprising:

a substrate;

a first photosensor comprising a first photodiode over the substrate;

a second photosensor comprising a second photodiode over the substrate;

a third photosensor comprising a third photodiode over the substrate;

a light-blocking film over the first photosensor, the second photosensor, and the third photosensor, the light-blocking film comprising a first opening, a second opening, and a third opening;

a fourth photosensor comprising a fourth photodiode over the substrate;

a fifth photosensor comprising a fifth photodiode over the substrate; and

a sixth photosensor comprising a sixth photodiode over the substrate,

wherein the first photodiode corresponds to the first opening,

wherein the second photodiode corresponds to the second opening,

wherein the third photodiode corresponds to the third opening,

wherein the first opening, the second opening, and the third opening are arranged in this order in a first direction,

wherein an area of the first opening is larger than an area of the second opening,

wherein the area of the second opening is larger than an area of the third opening,

wherein the first opening and the first photosensor are not overlapped with each other in a direction normal to a surface of the substrate,

wherein the light-blocking film comprises a fourth opening, a fifth opening, and a sixth opening,

wherein the fourth photodiode corresponds to the fourth opening,

wherein the fifth photodiode corresponds to the fifth opening,

wherein the sixth photodiode corresponds to the sixth opening,

wherein the fourth opening, the fifth opening, and the sixth opening are arranged in this order in a second direction,

wherein an area of the fourth opening is larger than an area of the fifth opening,

wherein the area of the fifth opening is larger than an area of the sixth opening,

wherein the first direction and the second direction are parallel and opposite to each other, and

wherein the fourth opening and the fourth photosensor are not overlapped with each other in the direction normal to the surface of the substrate.

14. The semiconductor device according to claim 13 , further comprising:

a seventh photosensor comprising a seventh photodiode;

an eighth photosensor comprising an eighth photodiode; and

a ninth photosensor comprising a ninth photodiode,

wherein the light-blocking film comprises a seventh opening, an eighth opening, and a ninth opening,

wherein the seventh photodiode corresponds to the seventh opening,

wherein the eighth photodiode corresponds to the eighth opening,

wherein the ninth photodiode corresponds to the ninth opening,

wherein the seventh opening, the eighth opening, and the ninth opening are arranged in this order in a third direction,

wherein an area of the seventh opening is larger than an area of the eighth opening,

wherein the area of the eighth opening is larger than an area of the ninth opening,

wherein the first direction and the third direction are different from each other, and

wherein the seventh opening and the seventh photosensor are not overlapped with each other in the direction normal to the surface of the substrate.

15. The semiconductor device according to claim 14 ,

wherein the first direction and the third direction are orthogonal to each other.

16. The semiconductor device according to claim 15 , wherein at least one of the first photosensor, the second photosensor, the third photosensor, and the fourth photosensor comprises a transistor comprising a channel formation region comprising an oxide semiconductor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2011
From: KUROKAWA, YOSHIYUKI; IKEDA, TAKAYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 026671/0187 →
Priority Claims (2)
JP 2010-177721 · Aug 6, 2010 · national
JP 2011-108646 · May 13, 2011 · national
Continuity (1)
Related Publication 20120032193A1 · Feb 9, 2012