Electro-optical device and electronic apparatus
Disclosed is a pixel electrode which is electrically connected to a scanning line electrically connected to a gate electrode, a data line electrically connected to a data line side source and drain region, and a pixel electrode side source and drain region; and a capacitance element which has a first capacitance electrode which is electrically connected to a capacitance line, a second capacitance electrode which is provided to oppose the first capacitance electrode, and a dielectric layer which is interposed between the first capacitance electrode and the second capacitance electrode, where the first capacitance electrode is arranged to be covered with the dielectric layer and the second capacitance electrode between a layer where the transistor, the scanning line, and the data line are provided and a layer where the pixel electrode is provided.
1. An electro-optical device comprising:
a transistor that has a gate electrode, a first source and drain region, and a second source and drain region;
a scanning line that is electrically connected to the gate electrode;
a data line that is electrically connected to the first source and drain region;
a pixel electrode that is electrically connected to the second source and drain region; and
a capacitance element that has a first capacitance electrode, a second capacitance electrode, a dielectric layer that is interposed between the first capacitance electrode and the second capacitance electrode, the first capacitance electrode being electrically connected to a capacitance line, the second capacitance electrode being disposed opposite to the first capacitance electrode,
the first capacitance electrode being arranged so as to be covered with the dielectric layer and the second capacitance electrode, the first capacitance electrode being disposed between a first layer and a second layer, the first layer being one of a layer of the transistor, a layer of the scanning line, and a layer of the data line, the second layer being a layer of the pixel electrode.
2. The electro-optical device according to claim 1 ,
a first insulation film being disposed between the second capacitance electrode and the pixel electrode,
the second capacitance electrode and the pixel electrode being electrically connected via a first contact hole that is provided through the first insulation film, the first contact hole being arranged at a position overlapping the capacitance element when looking from a direction crossing to a surface of the pixel electrode.
3. The electro-optical device according to claim 1 ,
a second insulation film being disposed between the first capacitance electrode and the capacitance line,
the first capacitance electrode and the capacitance line being electrically connected via a second contact hole that is provided through the second insulation film.
4. The electro-optical device according to claim 3 ,
the first contact hole not overlapping with the second contact hole when looking from a direction crossing to a surface of the pixel electrode.
5. The electro-optical device according to claim 1 ,
the capacitance element being disposed corresponding to an intersection portion of the scanning line and the data line when looking from a direction crossing to a surface of the pixel electrode.
6. The electro-optical device according to claim 1 ,
the capacitance element being disposed in a position overlapping with the transistor when looking from a direction crossing to a surface of the pixel electrode.
7. An electronic apparatus comprising:
the electro-optical device according to claim 1 .
8. An electronic apparatus comprising:
the electro-optical device according to claim 2 .
9. An electronic apparatus comprising:
the electro-optical device according to claim 3 .
10. An electronic apparatus comprising:
the electro-optical device according to claim 4 .
11. An electronic apparatus comprising:
the electro-optical device according to claim 5 .
12. An electronic apparatus comprising:
the electro-optical device according to claim 6 .
13. The electro-optical device according to claim 1 ,
the layer of the transistor being one of a layer of the gate electrode and a layer of a semiconductor.