IP Library Granted Patent US 8,841,653
Granted Patent B2
US 8,841,653 · App. 12/787,932 · Granted Sep 23, 2014

Light-emitting element, light-emitting device, lighting device, and electronic appliance

Inventors: Satoko Shitagaki (Kanagawa, JP); Satoshi Seo (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5052H01L51/0072H01L2251/552H01L51/0074H01L51/0054
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Quick Facts
Patent No.
US 8,841,653
App. No.
12/787,932
Granted
Sep 23, 2014
Kind
B2
Abstract

A light-emitting element whose lifetime is improved. In addition, a light-emitting device, a lighting device, and an electronic appliance in which the light-emitting element is used. A light-emitting element including, between an anode and a cathode, a hole-transport layer and a layer containing a light-emitting substance provided to be in contact with a cathode side surface of the hole-transport layer, in which the hole-transport layer includes a first organic compound and an anti-reduction substance, and in which the layer containing a light-emitting substance includes a second organic compound and a light-emitting substance and has at least an electron-transport property is provided. In addition, a light-emitting device including the light-emitting element, or a lighting device or an electronic appliance including the light-emitting device is provided.

Claims (76)

1. A light-emitting element comprising:

an anode;

a hole-transport layer over the anode;

a first light-emitting layer over and in contact with the hole-transport layer;

a second light-emitting layer over and in contact with the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein the hole-transport layer includes a first organic compound and an anti-reduction substance,

wherein an electron-accepting property of the anti-reduction substance is higher than an electron-accepting property of the first organic compound,

wherein the first light-emitting layer includes a first host material having an electron-transport property and a first light-emitting material,

wherein the second light-emitting layer includes a second host material having an electron-transport property and a second light-emitting material having a hole-trapping property,

wherein the LUMO level of the anti-reduction substance is lower than the LUMO level of the first organic compound and the LUMO level of the first light-emitting layer, and

wherein the LUMO level of the first light-emitting layer is lower than the LUMO level of the first organic compound.

2. The light-emitting element according to claim 1 ,

wherein the anode and the hole-transport layer are in contact with each other.

3. The light-emitting element according to claim 1 ,

wherein the first light-emitting layer and the second light-emitting layer are formed by a wet method.

4. A light-emitting device comprising the light-emitting element according to claim 1 .

5. A lighting device comprising the light-emitting device according to claim 4 .

6. An electronic appliance comprising the light-emitting device according to claim 4 .

7. The light-emitting element according to claim 1 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material.

8. The light-emitting element according to claim 1 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material, and

wherein a difference between an absolute value of the HOMO level of the second host material and an absolute value of the HOMO level of the second light-emitting material is greater than 0.2 eV.

9. A light-emitting element comprising:

an anode;

a hole-transport layer over the anode;

a first light-emitting layer over and in contact with the hole-transport layer;

a second light-emitting layer over and in contact with the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein the hole-transport layer includes a first organic compound and an anti-reduction substance,

wherein an electron-accepting property of the anti-reduction substance is higher than an electron-accepting property of the first organic compound,

wherein the first light-emitting layer includes a first host material having an electron-transport property and a first light-emitting material,

wherein the second light-emitting layer includes a second host material having an electron-transport property and a second light-emitting material having a hole-trapping property,

wherein the LUMO level of the anti-reduction substance is lower than the LUMO level of the first organic compound and the LUMO level of the first light-emitting layer,

wherein the LUMO level of the first light-emitting layer is lower than the LUMO level of the first organic compound, and

wherein a concentration of the first light-emitting material included in the first light-emitting layer is higher than a concentration of the second light-emitting material included in the second light-emitting layer.

10. The light-emitting element according to claim 9 ,

wherein the anode and the hole-transport layer are in contact with each other.

11. The light-emitting element according to claim 9 ,

wherein the first light-emitting layer and the second light-emitting layer are formed by a wet method.

12. A light-emitting device comprising the light-emitting element according to claim 9 .

13. A lighting device comprising the light-emitting device according to claim 12 .

14. An electronic appliance comprising the light-emitting device according to claim 12 .

15. The light-emitting element according to claim 9 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material.

16. The light-emitting element according to claim 9 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material, and

wherein a difference between an absolute value of the HOMO level of the second host material and an absolute value of the HOMO level of the second light-emitting material is greater than 0.2 eV.

17. A light-emitting element comprising:

an anode;

a hole-transport layer over the anode;

a first light-emitting layer over and in contact with the hole-transport layer;

a second light-emitting layer over and in contact with the first light-emitting layer; and

a cathode over the second light-emitting layer,

wherein the hole-transport layer includes a first organic compound and an anti-reduction substance,

wherein an electron-accepting property of the anti-reduction substance is higher than an electron-accepting property of the first organic compound,

wherein the first light-emitting layer includes a first host material having an electron-transport property and a first light-emitting material,

wherein the second light-emitting layer includes a second host material having an electron-transport property and a second light-emitting material having a hole-trapping property,

wherein the LUMO level of the anti-reduction substance is lower than the LUMO level of the first organic compound and the LUMO level of the first light-emitting layer,

wherein the LUMO level of the first light-emitting layer is lower than the LUMO level of the first organic compound, and

wherein the anti-reduction substance includes metal oxide.

18. The light-emitting element according to claim 17 ,

wherein a concentration of the metal oxide included in the first organic compound is greater than or equal to 67 wt % and less than 100 wt % in the hole-transport layer.

19. The light-emitting element according to claim 17 ,

wherein the anode and the hole-transport layer are in contact with each other.

20. The light-emitting element according to claim 17 ,

wherein the first light-emitting layer and the second light-emitting layer are formed by a wet method.

21. A light-emitting device comprising the light-emitting element according to claim 17 .

22. A lighting device comprising the light-emitting device according to claim 21 .

23. An electronic appliance comprising the light-emitting device according to claim 21 .

24. The light-emitting element according to claim 17 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material.

25. The light-emitting element according to claim 17 ,

wherein the HOMO level of the second host material is lower than the HOMO level of the second light-emitting material, and

wherein a difference between an absolute value of the HOMO level of the second host material and an absolute value of the HOMO level of the second light-emitting material is greater than 0.2 eV.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2010
From: SHITAGAKI, SATOKO; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 024444/0449 →
Priority Claims (1)
JP 2009-131613 · May 29, 2009 · national
Continuity (1)
Related Publication 20100301382A1 · Dec 2, 2010