IP Library Granted Patent US 8,852,998
Granted Patent B1
US 8,852,998 · App. 13/598,152 · Granted Oct 7, 2014

Method to fabricate micro and nano diamond devices

Inventors: Alfredo M. Morales (Livermore, CA); Richard J. Anderson (Oakland, CA); Nancy Y. C. Yang (Lafayette, CA); Jack L. Skinner (Butte, MT); Michael J. Rye (Los Lunas, NM)
Assignee: Sandia Corporation
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Quick Facts
Patent No.
US 8,852,998
App. No.
13/598,152
Granted
Oct 7, 2014
Kind
B1
Abstract

A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between the first contact and the second contact. An apparatus including a first contact and a separate second contact on a substrate; and a nanowire including a single crystalline or polycrystalline diamond material on the substrate and connected to each of the first contact and the second contact.

Claims (14)

1. A method comprising:

forming a layer of diamond material on a surface of a substrate;

forming a first contact and a separate second contact on the diamond material, the second contact separated from the first contact;

forming a nanowire in the layer of diamond material between the first contact and the second contact;

forming contact pads of the diamond material for each of the first contact and the second contact such that each of the first contact and the second contact are disposed on a contact pad of the diamond material;

forming a gate electrode on the nanowire, the gate electrode separated from the nanowire by a dielectric material; and

after forming the nanowire, doping the nanowire with one of a p-type dopant and an n-type dopant.

2. The method of claim 1 , wherein the nanowire has a width of 400 nanometers or less.

3. The method of claim 1 , wherein forming the nanowire comprises isolating the first contact from the second contact such that the nanowire is the only portion of diamond material extending between the two contacts.

4. The method of claim 1 , wherein forming the nanowire comprises isolating an area around the first contact and around the second contact from diamond material in a field area of the structure.

5. The method of claim 1 , wherein forming the nanowire comprising focused ion beam etching the diamond material.

6. The method of claim 1 , wherein forming the first contact and the second contact comprises ion beam induced deposition.

7. The method of claim 1 , wherein the surface of the substrate comprises a dielectric material and the diamond material is formed on a surface of the dielectric material.

8. The method of claim 1 , wherein the diamond material is single crystalline diamond.

Assignments (3)
CHANGE OF NAME Recorded May 22, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 046207/0342 →
CONFIRMATORY LICENSE Recorded Dec 19, 2012
From: SANDIA CORPORATION
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 029497/0550 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2012
From: MORALES, ALFREDO M.; YANG, NANCY Y.C.; ANDERSON, RICHARD J.; SKINNER, JACK L.; RYE, MICHAEL J.
To: SANDIA CORPORATION
Reel/Frame 029390/0394 →
Continuity (1)
Provisional Application 61529067 · Aug 30, 2011