Nitride semiconductor light emitting device and method of manufacturing the same
A semiconductor light emitting device having a light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer above the at least one first conductive GaN based semiconductor layer, and at least one second conductive GaN based semiconductor layer above the active layer, a plurality of patterns disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, and an insulating member on the plurality of patterns. The plurality of patterns include a lower part contacting with the light emitting structure and a upper part contacting with the light emitting structure. A first base angle of the lower part is different from the second base angle of the upper part.
1. A semiconductor light emitting device, comprising:
a semiconductor light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer, and at least one second conductive GaN based semiconductor layer, wherein the semiconductor light emitting structure only includes semiconductor multi-layers;
a plurality of insulating members disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, wherein each of the insulating members includes a reverse trapezoidal cross section having a top wider than a base and a top surface of the insulating members protrudes above a top surface of the semiconductor light emitting structure; and
a first electrode directly contacting an entire top surface of the at least one first conductive GaN based semiconductor layer and the entire top surface of the plurality of insulating members,
wherein the insulating members include a lower part contacting with one of the at least one first and the at least one second conductive GaN based semiconductor layers and an upper part contacting with another of the at least one first and the at least one second conductive GaN based semiconductor layers,
wherein the insulating members are not disposed on a top surface of the semiconductor light emitting structure, and
wherein an entire lowermost surface of the insulating members is in contact with the semiconductor light emitting structure and the entire top surface of the insulating members is not in contact with the semiconductor light emitting structure.
2. The semiconductor light emitting device according to claim 1 , wherein the at least one first conductive GaN based semiconductor layer, the active layer and the at least one second conductive GaN based semiconductor layer have a common exposed side portion.
3. The semiconductor light emitting device according to claim 1 , wherein the insulating members are spaced substantially a same distance apart.
4. The semiconductor light emitting device according to claim 1 , wherein the insulating members comprise at least one of SiO 2 or Si x N x .
5. The semiconductor light emitting device according to claim 1 , wherein a first base angle of the lower part is from 10° to 80°.
6. The semiconductor light emitting device according to claim 1 ,
wherein a first base angle of the lower part is different from a second base angle of the upper part, and
wherein the active layer comprises In x Ga y N z .
7. The semiconductor light emitting device according to claim 1 , wherein the at least one second conductive GaN based semiconductor layer comprises an Al x Ga y N z layer.
8. The semiconductor light emitting device according to claim 1 ,
wherein the at least one second conductive GaN based semiconductor layer comprises a plurality of p-type conductive layers, and
wherein at least one of the plurality of p-type conductive layers has a thickness of several hundreds to several thousands Å.
9. The semiconductor light emitting device according to claim 1 , wherein the at least one second conductive GaN based semiconductor layer includes an AlGaN layer, and
wherein an area of a first surface of the AlGaN layer adjacent to the active layer is different from an area of at least one of a top surface and a bottom surface of the AlGaN layer.
10. The semiconductor light emitting device according to claim 9 , further comprising:
a third conductive GaN based semiconductor layer above the active layer, having a conductive property equal to a first conductive property of the at least one first conductive GaN based semiconductor layer.
11. The semiconductor light emitting device according to claim 9 , wherein the at least one first conductive GaN based semiconductor layer, the active layer and the at least one second conductive GaN based semiconductor layer have a common exposed side portion.
12. The semiconductor light emitting device according to claim 9 , wherein the insulating members are spaced substantially a same distance apart.
13. The semiconductor light emitting device according to claim 9 , wherein the insulating members comprise at least one of SiO 2 or Si x N x .
14. The semiconductor light emitting device according to claim 9 , wherein the insulating members reflect light generated in the active layer toward an outside of the semiconductor light emitting device.
15. The semiconductor light emitting device according to claim 9 ,
wherein the at least one second conductive GaN based semiconductor layer comprises a plurality of p-type conductive layers, and
wherein at least one of the plurality of p-type conductive layers has a thickness of several hundreds to several thousands Å.