Interposer structure with passive component and method for fabricating same

1. An interposer structure for electrically coupling a semiconductor die to a support substrate in a semiconductor package, said interposer structure comprising:

at least one through-wafer via extending through a semiconductor substrate, said at least one through-wafer via providing an electrical connection between said semiconductor die and said support substrate;

conductive segments having a pitch substantially wider than said at least one through-wafer via, disposed on a bottom surface of said semiconductor substrate and electrically connecting said at least one through-wafer via to said support substrate;

a passive component comprising a trench conductor, said trench conductor extending through said semiconductor substrate without electrically coupling said semiconductor die to said support substrate;

a plurality of conductive pads, each disposed on a top surface of said semiconductor substrate that is opposite the bottom surface and coupling one of said at least one through-wafer via and said passive component to said semiconductor die; and

a dielectric liner disposed between said semiconductor substrate and each of said at least one through-wafer via and said passive component;

wherein each of said at least one through-wafer via and said passive component is completely electrically isolated from said semiconductor substrate; and

wherein a first terminal is situated on one end of the passive component and a second terminal is situated on another end of the passive component, the first and second terminals being on the top surface of said semiconductor substrate.

2. The interposer structure of claim 1 , wherein said passive component is electrically coupled to said semiconductor die by at least one solder bump.

3. The interposer structure of claim 1 , wherein said passive component is an inductor.

4. The interposer structure of claim 1 , wherein said passive component is an antenna.

5. The interposer structure of claim 1 , wherein said trench conductor has a spiral shaped trench.

6. The interposer structure of claim 1 further comprising a dielectric layer situated over said trench conductor.

7. The interposer structure of claim 1 , wherein said trench conductor is exposed on the bottom surface of said semiconductor substrate.

8. The interposer structure of claim 1 , wherein said support substrate comprises a ball grid array substrate.

9. An interposer structure for electrically coupling a semiconductor die to a support substrate in a semiconductor package, said interposer structure comprising:

at least one through-wafer via extending through a semiconductor substrate, said at least one through-wafer via providing an electrical connection between said semiconductor die and said support substrate;

conductive segments having a pitch substantially wider than said at least one through-wafer via, disposed on a bottom surface of said semiconductor substrate and electrically connecting said at least one through-wafer via to said support substrate;

an inductor or antenna within said semiconductor substrate without electrically coupling said semiconductor die to said support substrate;

a plurality of conductive pads, each disposed on a top surface of said semiconductor substrate that is opposite the bottom surface and coupling one of said at least one through-wafer via to said semiconductor die; and

a dielectric liner disposed between said semiconductor substrate and each of said at least one through-wafer via and said inductor or antenna;

wherein each of said at least one through-wafer via and said inductor or antenna is completely electrically isolated from said semiconductor substrate; and

wherein a first terminal is situated on one end of the inductor or antenna and a second terminal is situated on an opposite end of the inductor or antenna, the first and second terminals being on the top surface of said semiconductor substrate.

10. The interposer structure of claim 9 , wherein said inductor or antenna is electrically coupled to said semiconductor die by at least one solder bump.

11. The interposer structure of claim 9 , wherein said inductor or antenna has a spiral shaped trench.

12. The interposer structure of claim 9 further comprising a dielectric layer situated over said inductor or antenna.

13. The interposer structure of claim 1 , wherein the first and second terminals are configured to electrically couple said passive component to said semiconductor die.

14. The interposer structure of claim 1 , wherein said trench conductor is situated in a trench opening in said semiconductor substrate, said trench opening having a narrow extent lateral to a top surface of said interposer structure.

15. The interposer structure of claim 1 , wherein said trench conductor is situated in a trench opening, said trench opening having a spiral shaped opening within said interposer structure.

16. The interposer structure of claim 1 , wherein:

a first conductive pad of the plurality of conductive pads is configured as the first terminal of the passive component, and

a second conductive pad of the plurality of conductive pads is configured as the second terminal of the passive component.

17. The interposer structure of claim 16 , wherein the first and second conductive pads are situated on respective ends of the trench conductor.

18. The interposer structure of claim 9 , wherein the first and second terminals are configured to electrically couple the inductor or antenna to the semiconductor die.

19. The interposer structure of claim 9 , wherein:

a first conductive pad of the plurality of conductive pads is configured as the first terminal of the inductor or antenna, and

a second conductive pad of the plurality of conductive pads is configured as the second terminal of the inductor or antenna.

20. The interposer structure of claim 19 , wherein the first and second conductive pads are situated on respective ends of a trench conductor.