Method for forming a cleaved facet of semiconductor device
Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.
1. A method for forming a cleaved facet of a semiconductor device, the method comprising:
forming at least one compound semiconductor layer on a top r-face of a substrate;
forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line,
wherein the guide line extends in a (11-22)-plane direction of the substrate,
wherein the guide line extends from one portion of an edge to another portion of the edge, and
wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and
applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor.
2. The method according to claim 1 , wherein the forming of the line for cleavage comprising:
weakening the bottom r-face of the substrate in the (11-22)-plane direction of the substrate, the line for cleavage being formed on the bottom r-face of the substrate.
3. The method according to claim 1 , wherein the line for cleavage is formed by scribing the bottom r-face of the substrate in the (11-22)-plane direction of the substrate.
4. The method according to claim 1 , wherein the line for cleavage is formed by ablating the bottom r-face of the substrate in the (11-22)-plane direction of the substrate.
5. The method according to claim 1 , wherein the line for cleavage is formed by etching the bottom r-face of the substrate in the (11-22)-plane direction of the substrate.
6. The method according to claim 1 , wherein the substrate is a sapphire substrate or spinel substrate.
7. The method according to claim 6 , wherein the substrate has a thickness of 0.0001 to 300 μm.
8. The method according to claim 1 , wherein the at least one compound semiconductor layer includes a group III-V nitride compound semiconductor.
9. The method according to claim 8 , wherein the at least one compound semiconductor layer has at least one diode laser structure.
10. The method according to claim 8 , wherein the at least one compound semiconductor layer has at least one light emitting diode structure.
11. The method according to claim 1 , wherein the at least one compound semiconductor layer is grown on the top r-face of the substrate in a direction perpendicular to a a-plane of the at least one compound semiconductor layer.
12. The method according to claim 1 , wherein the cleaved facet is formed on the at least one compound semiconductor layer in a direction perpendicular to the top r-face of the substrate.
13. The method according to claim 1 , wherein the line for cleavage is formed along an entire length or along at least 95% of the entire length of the guide line.
14. The method according to claim 1 , wherein the at least one compound semiconductor layer has an rms roughness of 0.0001 to 200 μm.
15. The method according to claim 1 , wherein the at least one compound semiconductor layer and the substrate are simultaneously or sequentially cleaved.