Flowable films using alternative silicon precursors
Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the deposition chamber. The excited precursor is also introduced to the deposition chamber, where it reacts with the silicon-containing precursor in a reaction zone deposits the initially flowable film on the substrate. The flowable film may be treated in, for example, a steam environment to form a silicon oxide film.
1. A method of depositing a flowable silicon-and-nitrogen containing film on a substrate, the method comprising:
introducing a silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor is one of a carbon-free, silicon-and-nitrogen-containing precursor comprising:
or a cyclic silicon-and-nitrogen-containing precursor comprising:
or a carbon-containing silicon precursor comprising:
or a Si-Si bond containing precursor comprising:
or a silicon-containing precursor comprising:
generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber; and
introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate.
2. The method of claim 1 , wherein the generation of the atomic nitrogen comprises exposing ammonia to a plasma in the remote plasma system, wherein at least a portion of the ammonia decomposes into the radical nitrogen precursor.
3. The method of claim 1 , wherein the radical nitrogen precursor has the formula NH x , where x is 0, 1 or 2.
4. The method of claim 1 , wherein the silicon and nitrogen containing film comprises a silicon carbonitride film.
5. The method of claim 1 , wherein the silicon and nitrogen containing film comprises a Si—N(H)—Si bond containing film.
6. The method of claim 1 , wherein the method further comprises annealing the silicon and nitrogen containing film to form a silicon oxide film.
7. The method of claim 6 , wherein the annealing is performed in an atmosphere comprising steam.
8. The method of claim 1 , wherein a temperature for the deposition of the silicon and nitrogen containing film on the substrate is about 0° C. to about 400° C.
9. The method of claim 1 , wherein a temperature for the deposition of the silicon and nitrogen containing film on the substrate is about 0° C. to about 200° C.