Method of manufacturing a light emitting, power generating or other electronic apparatus

1. A method of fabricating an electronic device, the method comprising:

depositing a plurality of diodes suspended in a mixture of a first solvent and a viscosity modifier, each diode of the plurality of diodes comprising:

a light emitting or absorbing region, the light emitting or absorbing region having a mesa region;

at least one first terminal coupled to the light emitting or absorbing region on a first side and located peripherally to the mesa region; and

a second terminal coupled centrally to the mesa region on the first side;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns; and

depositing one or more first conductors.

2. The method of claim 1 , wherein the first solvent comprises at least one solvent selected from the group consisting of: water; alcohols, cyclic alcohols, ethers, esters, glycols, glycerols, carbonates, acetonitrile, tetrahydrofuran (THF), dimethyl formamide (DMF), N-methyl formamide (NMF), dimethyl sulfoxide (DMSO), and mixtures thereof.

3. The method of claim 1 , wherein the viscosity modifier comprises a methylcellulose resin.

4. The method of claim 1 , wherein the viscosity modifier comprises at least one viscosity modifier selected from the group consisting of: a methoxy propyl methylcellulose resin, a hydroxy propyl methylcellulose resin, a polyvinyl polymer, a polyvinyl copolymer, and mixtures thereof.

5. The method of claim 1 , wherein the viscosity modifier comprises a viscosity modifier selected from the group consisting of: clays, saccharides, polysaccharides, celluloses, modified celluloses, acrylate polymers and copolymers, (meth)acrylate polymers and copolymers, polyvinyl polymers and copolymers, polyethylene polymers and copolymers, ethers, esters, acetates, glycols, glycerols, fumed silica, silica powders, modified ureas, and mixtures thereof.

6. The method of claim 1 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes suspended in a first solvent, a viscosity modifier and a second solvent different from the first solvent.

7. The method of claim 6 , wherein the second solvent is at least one solvent selected from the group consisting of: water; alcohols, cyclic alcohols, ethers, esters, glycols, glycerols, carbonates, acetonitrile, tetrahydrofuran (THF), dimethyl formamide (DMF), N-methyl formamide (NMF), dimethyl sulfoxide (DMSO), and mixtures thereof.

8. The method of claim 6 , wherein the first solvent comprises N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, 1-octanol, ethanol, tetrahydrofurfuryl alcohol, or cyclohexanol, or mixtures thereof; wherein the viscosity modifier comprises methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof, and wherein the second solvent comprises N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, 1-octanol, ethanol, tetrahydrofurfuryl alcohol, or cyclohexanol, or mixtures thereof.

9. The method of claim 1 , wherein each diode of the plurality of diodes has a diameter between about 20 to 30 microns and a height between about 5 to 15 microns.

10. The method of claim 1 , wherein each diode of the plurality of diodes has a lateral dimension between about 10 to 50 microns and a height between about 5 to 25 microns.

11. The method of claim 1 , wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension between about 10 to 50 microns measured opposing face-to face, and a height between about 5 to 25 microns.

12. The method of claim 1 , wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension measured opposing face-to face between about 20 to 30 microns and a height between about 5 to 15 microns.

13. The method of claim 1 , wherein each diode of the plurality of diodes has a width and length each between about 10 to 50 microns each and a height between about 5 to 25 microns.

14. The method of claim 1 , wherein each diode of the plurality of diodes has a width and length each between about 20 to 30 microns each and a height between about 5 to 15 microns.

15. The method of claim 1 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes and a plurality of substantially optically transparent and chemically inert particles suspended in the first solvent and the viscosity modifier, each inert particle of the plurality of substantially optically transparent and chemically inert particles between about 10 to about 50 microns.

16. The method of claim 1 , wherein the light emitting or absorbing region of the diode comprises GaN and has a shape selected from the group consisting of: substantially hexagonal, substantially square, substantially triangular, substantially rectangular, substantially lobed, substantially stellate, substantially toroidal, and combinations thereof.

17. The method of claim 1 , wherein the light emitting or absorbing region of each diode of the plurality of diodes has a surface texture selected from the group consisting of: a plurality of circular rings, a plurality of substantially curvilinear trapezoids, a plurality of parallel stripes, a stellate pattern, and combinations thereof.

18. The method of claim 1 , wherein for each diode of the plurality of diodes, a contact of the second terminal is spaced apart from a contact of the at least one first terminal by about 1 to 7 microns in height.

19. The method of claim 18 , wherein the at least one first terminal is between 0.5 to 2 microns in height and the second terminal is between about 1 to 8 microns in height.

20. The method of claim 1 , wherein each diode of the plurality of diodes has at least one metal via structure extending between at least one p+ or n+GaN layer on a first side of the diode to a second side of the diode.

21. The method of claim 20 , wherein the metal via structure comprises a central via, a peripheral via, or a perimeter via.

22. The method of claim 1 , wherein each diode of the plurality of diodes has a plurality of lateral sides which are less than 10 microns in height.

23. The method of claim 1 , wherein lateral sides of each diode of the plurality of diodes has a plurality of lateral sides which are between about 2.5 to 6 microns in height.

24. The method of claim 1 , wherein each diode of the plurality of diodes has a plurality of lateral sides which are substantially sigmoidal and terminate in a curved point.

25. The method of claim 1 , wherein the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting of: silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and mixtures thereof.

26. The method of claim 1 , wherein the step of depositing one or more first conductors further comprises:

depositing one or more first conductors over the plurality of diodes and coupling the one or more first conductors to the at least one first terminal of each of the diodes of the plurality of diodes.

27. The method of claim 1 , further comprising:

depositing at least one dielectric layer; and

depositing one or more second conductors over the dielectric layer and coupling the one or more second conductors to the second terminal of each of the diodes of the plurality of diodes.

28. The method of claim 27 , wherein the step of depositing the one or more first conductors further comprises:

depositing a first electrode comprising a first busbar and a first plurality of elongated conductors extending from the first busbar and a second electrode comprising a second busbar and a second plurality of elongated conductors extending from the second busbar.

29. The method of claim 28 , wherein step of depositing the one or more first conductors further comprises depositing the second electrode to have the second plurality of elongated conductors interdigitated with the first plurality of elongated conductors.

30. The method of claim 28 , wherein the step of depositing the one or more second conductors further comprises coupling the one or more second conductors to the second plurality of elongated conductors.

31. The method of claim 27 , wherein the dielectric layer is deposited as at least two dielectric layers between the one or more first conductors and the one or more second conductors, and each dielectric layer has a wet thickness between about 5 to 20 microns.

32. The method of claim 27 , further comprising:

depositing a barrier layer coupled to the dielectric layer and to the one or more second conductors.

33. The method of claim 32 , wherein the barrier layer comprises a viscosity modifier selected from the group consisting of: clays, saccharides, polysaccharides, celluloses, modified celluloses, acrylate polymers and copolymers, (meth)acrylate polymers and copolymers, polyvinyl polymers and copolymers, polyethylene polymers and copolymers, ethers, esters, acetates, glycols, glycerols, fumed silica, silica powders, modified ureas, and mixtures thereof.

34. The method of claim 27 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes suspended in a first solvent and a viscosity modifier over a substantially optically transmissive base on a first side, and the method further comprising:

depositing a phosphor layer on a second side of the base.

35. The method of claim 27 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes suspended in a first solvent and a viscosity modifier over a substantially optically transmissive base on a first side, and the method further comprising:

depositing a first phosphor layer over the one or more second conductors, wherein the one or more second conductors are substantially optically transmissive;

depositing a second phosphor layer on a second side of the base.

36. The method of claim 35 , wherein the first and second phosphor layers are each deposited to have a wet film thickness of 15 to 17 microns.

37. The method of claim 27 , further comprising:

depositing a second dielectric layer; and

depositing one or more third conductors coupled to the one or more second conductors.

38. The method of claim 27 , further comprising:

depositing one or more third conductors;

depositing a second dielectric layer; and

wherein the step of depositing the one or more first conductors further comprises depositing the one or more first conductors over the second dielectric layer and over the one or more third conductors.

39. The method of claim 27 , further comprising:

depositing a first carbon electrode couple to the one or more first conductors; and

depositing a second carbon electrode couple to the one or more second conductors.

40. The method of claim 27 , wherein the step of depositing the one or more first conductors comprises depositing a conductive ink or a conductive polymer.

41. The method of claim 27 , wherein the one or more second conductors are substantially optically transmissive.

42. The method of claim 27 , wherein the step of depositing the one or more second conductors further comprises depositing an optically transmissive polymer or conductive ink.

43. The method of claim 27 , wherein the one or more second conductors are deposited to have a wet film thickness of 6 to 18 microns.

44. The method of claim 1 , further comprising:

sonicating the plurality of diodes suspended in a first solvent and a viscosity modifier.

45. The method of claim 1 , wherein the plurality of diodes are deposited to have a mean density from about 25 diodes to 50,000 diodes per square centimeter of a base.

46. The method of claim 1 , wherein the one or more first conductors are deposited to have a wet film thickness of 10 to 12 microns.

47. The method of claim 1 , wherein the plurality of diodes suspended in a first solvent and a viscosity modifier are deposited to have a wet film thickness of 18 to 20 microns.

48. The method of claim 1 , wherein the deposition steps further comprise printing.

49. The method of claim 1 , wherein the deposition steps further comprise at least one deposition process selected from the group consisting of: printing, coating, rolling, spraying, layering, sputtering, lamination, screen printing, inkjet printing, electro-optical printing, electroink printing, photoresist printing, thermal printing, laser jet printing, magnetic printing, pad printing, flexographic printing, hybrid offset lithography, Gravure printing, and combinations thereof.

50. The method of claim 1 , wherein the plurality of diodes are light emitting diodes or photovoltaic diodes.

51. The method of claim 1 , wherein the first solvent comprises cyclohexanol.

52. The method of claim 1 , wherein the light emitting or absorbing region of each diode, of the plurality of diodes, has a lateral dimension less than about 50 microns and a height between 2.5 to 7 microns.

53. The method of claim 1 , wherein the at least one first terminal of each diode, of the plurality of diodes, further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side, and wherein each first terminal of the plurality of first terminals has a height between about 0.5 to 2 microns.

54. The method of claim 1 , wherein a contact of the second terminal of each diode, of the plurality of diodes, is spaced apart from a contact of the at least one first terminal by about 2 to 5 microns in height.

55. The method of claim 1 , wherein the mesa region has a height of 0.5 to 2 microns and a lateral dimension less than about 50 microns.

56. The method of claim 1 , wherein the second terminal of each diode, of the plurality of diodes, further comprises:

a center metal layer about 0.5 to 1.5 microns in height and a lateral dimension between about 6 to 10 microns, the center metal layer coupled to the mesa region of the light emitting or absorbing region; and

die metal less than about 8 microns in height and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer.

57. The method of claim 1 , wherein the second terminal and the light emitting or absorbing region of each diode, of the plurality of diodes, further comprise nitride passivation on a plurality of lateral sides.

58. A method comprising:

depositing a plurality of diodes suspended in a mixture of first solvent and a viscosity modifier on a first side of an optically transmissive base, each diode of the plurality of diodes comprising:

a light emitting or absorbing region, the light emitting or absorbing region having a mesa region;

at least one first terminal coupled to the light emitting or absorbing region on a first side and located peripherally to the mesa region; and

a second terminal coupled centrally to the mesa region on the first side;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns;

depositing one or more first conductors coupled to the at least one first terminals;

depositing at least one dielectric layer coupled to the one or more first conductors;

depositing one or more second conductors coupled to the second terminals; and

depositing a first phosphor layer on a second side of the optically transmissive base.

59. The method of claim 58 , wherein the first solvent comprises at least one solvent selected from the group consisting of: water; alcohols, cyclic alcohols, ethers, esters, glycols, glycerols, carbonates, acetonitrile, tetrahydrofuran (THF), dimethyl formamide (DMF), N-methyl formamide (NMF), dimethyl sulfoxide (DMSO), and mixtures thereof.

60. The method of claim 58 , wherein the viscosity modifier comprises a viscosity modifier selected from the group consisting of: clays, saccharides, polysaccharides, celluloses, modified celluloses, acrylate polymers and copolymers, (meth)acrylate polymers and copolymers, polyvinyl polymers and copolymers, polyethylene polymers and copolymers, ethers, esters, acetates, glycols, glycerols, fumed silica, silica powders, modified ureas, and mixtures thereof.

61. The method of claim 58 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes suspended in a first solvent, a viscosity modifier and a second solvent different from the first solvent, wherein the second solvent is at least one solvent selected from the group consisting of: water; alcohols, cyclic alcohols, ethers, esters, glycols, glycerols, carbonates, acetonitrile, tetrahydrofuran (THF), dimethyl formamide (DMF), N-methyl formamide (NMF), dimethyl sulfoxide (DMSO), and mixtures thereof.

62. The method of claim 58 , wherein the step of depositing a plurality of diodes suspended in a first solvent and a viscosity modifier further comprises depositing a plurality of diodes and a plurality of substantially optically transparent and chemically inert particles suspended in the first solvent and the viscosity modifier, each inert particle of the plurality of substantially optically transparent and chemically inert particles between about 10 to about 50 microns.

63. The method of claim 58 , wherein each diode of the plurality of diodes has a plurality of lateral sides which are less than 10 microns in height are substantially sigmoidal and terminate in a curved point.

64. The method of claim 58 , further comprising:

depositing a barrier layer coupled to the dielectric layer prior to depositing the one or more second conductors.

65. The method of claim 64 , wherein the barrier layer comprises a viscosity modifier selected from the group consisting of: clays, saccharides, polysaccharides, celluloses, modified celluloses, acrylate polymers and copolymers, (meth)acrylate polymers and copolymers, polyvinyl polymers and copolymers, polyethylene polymers and copolymers, ethers, esters, acetates, glycols, glycerols, fumed silica, silica powders, modified ureas, and mixtures thereof.

66. The method of claim 58 , further comprising:

depositing a second phosphor layer over the one or more second conductors, wherein the one or more second conductors are substantially optically transmissive.

67. The method of claim 58 , further comprising:

sonicating the plurality of diodes suspended in a first solvent and a viscosity modifier.

68. The method of claim 58 , wherein the plurality of diodes are deposited to have a mean density from about 25 diodes to 50,000 diodes per square centimeter of the base.

69. The method of claim 58 , wherein the first solvent comprises cyclohexanol.

70. The method of claim 58 , wherein the at least one first terminal of each diode, of the plurality of diodes, further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side, and wherein each first terminal of the plurality of first terminals has a height between about 0.5 to 2 microns.

71. The method of claim 58 , wherein a contact of the second terminal of each diode, of the plurality of diodes, is spaced apart from a contact of the at least one first terminal by about 2 to 5 microns in height.

72. A method of fabricating an electronic device, the method comprising:

depositing a plurality of diodes, each diode of the plurality of diodes comprising:

a light emitting or absorbing region, the light emitting or absorbing region having a mesa region;

at least one first terminal coupled to the light emitting or absorbing region on a first side and located peripherally to the mesa region; and

a second terminal coupled centrally to the mesa region on the first side;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns.

73. The method of claim 72 , wherein the plurality of diodes are suspended in a mixture of a first solvent and a viscosity modifier.

74. The method of claim 72 , wherein the first solvent comprises cyclohexanol.

75. The method of claim 72 , wherein the plurality of diodes are deposited on a first side of an optically transmissive base.

76. The method of claim 75 , further comprising:

depositing one or more first conductors coupled to the at least one first terminals;

depositing at least one dielectric layer coupled to the one or more first conductors;

depositing one or more second conductors coupled to the second terminals; and

depositing a first phosphor layer on a second side of the optically transmissive base.

77. The method of claim 72 , wherein each diode of the plurality of diodes has a plurality of lateral sides which are less than 10 microns in height, are substantially sigmoidal and terminate in a curved point.

78. The method of claim 72 , wherein the at least one first terminal of each diode, of the plurality of diodes, further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side, and wherein each first terminal of the plurality of first terminals has a height between about 0.5 to 2 microns.