IP Library Granted Patent US 8,877,653
Granted Patent B2
US 8,877,653 · App. 13/729,069 · Granted Nov 4, 2014

Substrate processing method and substrate processing apparatus

Inventors: Takahiro Yamaguchi (Kyoto, JP); Akio Hashizume (Kyoto, JP); Yuya Akanishi (Kyoto, JP); Takashi Ota (Kyoto, JP)
Assignee: SCREEN Holdings Co., Ltd.
B44C1/227H01L21/00
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Quick Facts
Patent No.
US 8,877,653
App. No.
13/729,069
Granted
Nov 4, 2014
Kind
B2
Abstract

A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

Claims (10)

1. A substrate processing method comprising:

a liquid film forming step of supplying a solvent vapor containing a solvent material capable of dissolving hydrogen fluoride onto a surface of a substrate so that the solvent vapor condenses on the surface of the substrate to form a uniform liquid film containing the solvent material;

an etching step of supplying an etching vapor containing a hydrogen fluoride to the surface of the substrate covered by the liquid film containing the solvent material; and

are repetition step of repeating a cycle including the liquid film forming step and the etching step more than one time.

2. The substrate processing method according to claim 1 , wherein the solvent material is a material capable of dissolving hydrogen fluoride and water.

3. The substrate processing method according to claim 2 , wherein the solvent material is an organic compound having a boiling point below that of water.

4. The substrate processing method according to claim 1 , wherein the etching step includes a step of supplying the etching vapor containing a hydrogen fluoride and the solvent material to the surface of the substrate covered by the liquid film.

5. The substrate processing method according to claim 1 , wherein the substrate is a substrate on a surface of which a nitride film is formed.

6. The substrate processing method according to claim 5 , wherein the substrate is a substrate on a surface of which a nitride film and an oxide film are formed.

7. The substrate processing method according to claim 1 , wherein the substrate is one of a semiconductor wafer, a glass substrate for a liquid crystal display, and a substrate for a solar cell.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: DAINIPPON SCREEN MFG. CO., LTD.
To: SCREEN HOLDINGS CO., LTD.
Reel/Frame 034672/0120 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2012
From: YAMAGUCHI, TAKAHIRO; HASHIZUME, AKIO; AKANISHI, YUYA; OTA, TAKASHI
To: DAINIPPON SCREEN MFG. CO., LTD.
Reel/Frame 029537/0439 →
Priority Claims (1)
JP 2012-002772 · Jan 11, 2012 · national
Continuity (1)
Related Publication 20130175241A1 · Jul 11, 2013