Precharge circuit and non-volatile memory device
A precharge circuit includes a precharge unit configured to apply a voltage of a precharge voltage terminal to a data line during a precharge operation, and a sensing unit configured to disable the precharge unit by sensing the voltage of the precharge voltage terminal. The precharge circuit may control a precharge operation by sensing a change in the voltage level of the precharge voltage terminal.
1. A precharge circuit, comprising:
a precharge unit configured to apply a voltage of a precharge voltage terminal to a data line during a precharge operation when the precharge unit is enabled; and
a sensing unit configured to disable the precharge unit when the voltage of the precharge voltage terminal goes out of a threshold range.
2. The precharge circuit of claim 1 , wherein the precharge unit is configured to apply the voltage of the precharge voltage terminal to the data line when a precharge signal is enabled.
3. The precharge circuit of claim 2 , wherein the sensing unit is configured to disable the precharge signal.
4. The precharge circuit of claim 1 , wherein the voltage of the precharge voltage terminal includes a core voltage.
5. A non-volatile memory device, comprising:
an access unit configured to access a data of a memory cell;
a data line configured to receive the data of the memory cell through the access unit;
a precharge unit configured to apply a voltage of a precharge voltage terminal to the data line during a precharge operation when the precharge unit is enabled; and
a sensing unit configured to disable the precharge unit when the voltage of the precharge voltage terminal goes out of a threshold range.
6. The non-volatile memory device of claim 5 , further comprising:
an amplification unit configured to amplify a data loaded on the data line.
7. The non-volatile memory device of claim 5 , wherein the precharge unit is configured to apply the voltage of the precharge voltage terminal to the data line when a precharge signal is enabled.
8. The non-volatile memory device of claim 7 , wherein the sensing unit is configured to disable the precharge signal.
9. The non-volatile memory device of claim 5 , wherein the voltage of the precharge voltage terminal includes a core voltage.
10. The non-volatile memory device of claim 5 , wherein the access unit comprising:
a latch configured to latch the data of the memory cell; and
a selector configured to transfer the latched data to the data line in response to a selection signal.
11. The non-volatile memory device of claim 7 , wherein the sensing unit comprising:
a comparator configured to compare the voltage of the precharge voltage terminal with a predetermined value to generate a sensing signal based on a comparison result; and
a controller configured to disable the precharge signal in response to the sensing signal.
12. The non-volatile memory device of claim 11 , wherein the precharge signal is enabled during the precharge operation.
13. The non-volatile memory device of claim 11 , wherein the predetermined value is a threshold voltage.