Method for manufacturing semiconductor device
Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending between the center of the wafer and the notch, the method including: preparing the wafer having the front surface which has Off angle of at least 2 degrees and at most 2.8 degrees from plane in a direction in which Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the wafer in a direction perpendicular to the front surface.
1. A method for manufacturing a semiconductor device which includes, on a semiconductor substrate having a notch, a plurality of transistors in parallel with and perpendicular to a notch direction extending between a center of the semiconductor substrate and the notch, the method comprising:
preparing the semiconductor substrate which has a front surface having an Off angle of at least 2 degrees and at most 2.8 degrees from (100) plane in a direction in which a Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and
doping impurities into the front surface of the semiconductor substrate in a direction perpendicular to the front surface.
2. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the Twist angle is 22.5 degrees.
3. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the notch is formed at a periphery of the semiconductor substrate in <0-11> direction, and
the plurality of transistors are formed on the semiconductor substrate in the <0-11> direction and <011> direction, or in <001> direction and <010> direction.
4. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the notch is formed at a periphery of the semiconductor substrate in <0-11> direction, and
the plurality of transistors are formed on the semiconductor substrate in the <0-11> direction, <011> direction, <001> direction, and <010> direction.
5. The method for manufacturing the semiconductor device according to claim 1 ,
wherein an error angle of the Off angle is within ±0.1 degree.
6. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the vertical direction is a direction of 0±0.15 degree relative to the front surface of the semiconductor substrate.
7. The method for manufacturing the semiconductor device according to claim 1 ,
wherein doping the impurities is to form channel regions of the plurality of transistors.
8. The method for manufacturing the semiconductor device according to claim 1 ,
wherein doping the impurities is to form source-drain regions of the plurality of transistors.
9. The method for manufacturing the semiconductor device according to claim 1 ,
wherein doping the impurities is to form extension regions of the plurality of transistors.
10. The method for manufacturing the semiconductor device according to claim 2 ,
wherein the notch is formed at a periphery of the semiconductor substrate in <0-11> direction, and
the plurality of transistors are formed on the semiconductor substrate in the <0-11> direction and <011> direction, or in <001> direction and <010> direction.
11. The method for manufacturing the semiconductor device according to claim 2 ,
wherein the notch is formed at a periphery of the semiconductor substrate in <0-11> direction, and
the plurality of transistors are formed on the semiconductor substrate in the <0-11> direction, <011> direction, <001> direction, and <010> direction.
12. The method for manufacturing the semiconductor device according to claim 2 ,
wherein an error angle of the Off angle is within ±0.1 degree.
13. The method for manufacturing the semiconductor device according to claim 2 ,
wherein the vertical direction is a direction of 0±0.15 degree relative to the front surface of the semiconductor substrate.
14. The method for manufacturing the semiconductor device according to claim 2 ,
wherein doping the impurities is to form channel regions of the plurality of transistors.
15. The method for manufacturing the semiconductor device according to claim 2 ,
wherein doping the impurities is to form source-drain regions of the plurality of transistors.
16. The method for manufacturing the semiconductor device according to claim 2 ,
wherein doping the impurities is to form extension regions of the plurality of transistors.