Semiconductor composition including a semiconducting polymer
A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on/off ratio.
1. A semiconductor composition comprising:
a liquid;
carbon nanotubes; and
semiconducting polymer aggregates,
wherein each carbon nanotube present in the composition is a single-walled semiconducting carbon nanotube.
2. The semiconductor composition of claim 1 , wherein the carbon nanotubes are stabilized by the semiconducting polymer aggregates.
3. The semiconductor composition of claim 1 , wherein the composition has a shelf-life greater than 1 week.
4. The semiconductor composition of claim 1 , wherein the liquid comprises at least one of water, alcohol, acetate, toluene, xylene, tetrahydronaphthalene, methy-naphthalene, mesitylene, hexane, decalin, cyclohexane, chlorobenezene, dichlorobenzene, trichlorobenzene, chlorotoluene, hexafluoropropanol, perfluorodecalin, perfluorocyclohexane, and perfluorononane, acetone, methyl ethyl ketone, and mixtures thereof.
5. The semiconductor composition of claim 1 , wherein the semiconducting polymer aggregates are less than 2.0 wt % of the composition, and the carbon nanotubes are from about 1 to about 50 wt % of the total weight of the semiconducting polymer aggregates and the carbon nanotubes.
6. The semiconductor composition of claim 5 , wherein the weight ratio of carbon nanotubes to semiconducting polymer aggregates is from about 10:90 to about 50:50.
7. A semiconductor composition comprising:
carbon nanotubes; and
semiconductor polymer aggregates formed of a polythiophene of Formula (I):
wherein A is a divalent linkage; wherein each R is independently selected from hydrogen, alkyl, substituted alkyl, alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, substituted alkoxy, a heteroatom-containing group, halogen, —CN, or —NO 2 ; and wherein n is from 2 to about 5,000; and
a liquid in which the polythiophene is capable of forming the semiconducting polymer aggregates at room temperature,
wherein each carbon nanotube present in the composition is a single-walled semiconducting carbon nanotube.
8. The semiconductor composition of claim 7 , wherein R is alkyl having from about 6 to about 25 carbon atoms.
9. The semiconductor composition of claim 7 , wherein the weight ratio of the carbon nanotubes to the polythiophene is from about 1:99 to about 50:50.
10. The semiconductor composition of claim 7 , wherein the polythiophene has the structure of Formula (II):
wherein m is from 2 to about 2,500.
11. An electronic device comprising a semiconducting layer, the semiconducting layer including:
carbon nanotubes; and
semiconductor polymer aggregates formed of a polythiophene of Formula (I):
wherein A is a divalent linkage; wherein each R is independently selected from hydrogen, alkyl, substituted alkyl, alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, substituted alkoxy, a heteroatom-containing group, halogen, —CN, or —NO 2 ; and wherein n is from 2 to about 5,000, the polythiophene being capable of forming the semiconducting polymer aggregates at room temperature in a liquid,
wherein each carbon nanotube is a single-walled semiconducting carbon nanotube.
12. The electronic device of claim 11 , wherein the carbon nanotubes are present in the composition in an amount of at least 10 wt % of the polythiophene.
13. The electronic device of claim 11 , wherein the polythiophene has the structure of Formula (II):
wherein m is from 2 to about 2,500.