Indium-less transparent metalized layers
Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.
1. An optoelectronic device, comprising:
a substrate having a surface; and
an optically-porous electrically-conductive layer on the surface of the substrate, wherein the optically-porous electrically-conductive layer has a pattern that defines a plurality of fine openings therethrough such that the optically-porous electrically-conductive layer has an optical transmissivity of at least 85%, the optically-porous electrically-conductive layer comprising elemental palladium monoatomically bound to the surface of the substrate and an electrically conductive layer disposed on the monoatomically-bound elemental palladium.
2. The optoelectronic device of claim 1 , wherein the fine openings have irregular shapes.
3. The optoelectronic device of claim 1 , wherein the fine openings are rectangular in shape and have a width of less than 250 microns and a length of less than 250 microns.
4. The optoelectronic device of claim 1 , wherein the electrically conductive layer has a thickness of less than about 250 microns.
5. The optoelectronic device of claim 1 , wherein the substrate with the optically-porous electrically-conductive layer adhered thereto is flexible.
6. The optoelectronic device of claim 1 , wherein the substrate is rigid.
7. The optoelectronic device of claim 1 , wherein the electrically conductive layer comprises copper.
8. The optoelectronic device of claim 1 , further comprising an additional layer of material electroplated on the electrically conductive layer.