Semiconductor device having buried bit lines and method for fabricating the same
A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.
1. A semiconductor device comprising:
semiconductor bodies formed as stack structures of a semiconductor substrate, buried bit lines, and barrier layers,
wherein each of the buried bit lines includes a metal silicide and is buried in the semiconductor bodies; and
wherein the barrier layers containing germanium are formed under and over the buried bit line.
2. The semiconductor device according to claim 1 , wherein each of the barrier layers comprises silicon germanium.
3. The semiconductor device according to claim 2 , wherein a content of germanium in each of the barrier layers is at least approximately 30%.
4. The semiconductor device according to claim 1 , wherein the metal silicide comprises a cobalt silicide.
5. The semiconductor device according to claim 1 , further comprising:
semiconductor pillars formed over the semiconductor bodies and including channel regions of vertical channel transistors; and
storages connected to upper portions of the semiconductor pillars.