Contact structure
View Patent ↗There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
1. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal formed over the first substrate;
an internal conducting line formed from a same film as a gate electrode of the thin film transistor, the internal conducting line electrically connected to the extractor terminal; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the internal conducting line is electrically connected to the counter electrode.
2. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal formed over the first substrate;
a first internal conducting line formed from a same film as a gate electrode of the thin film transistor, the first internal conducting line electrically connected to the extractor terminal;
a second internal conducting line formed over the first substrate; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the first internal conducting line is electrically connected to the counter electrode and the second internal conducting line is electrically connected to the counter electrode, and
wherein the scanning line driver circuit is formed between the pixel region and the second internal conducting line.
3. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal including a conductive layer formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
an internal conducting line formed from a same film as a gate electrode of the thin film transistor, the internal conducting line electrically connected to the extractor terminal; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the internal conducting line is electrically connected to the counter electrode.
4. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal including a conductive layer formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
a first internal conducting line formed from a same film as a gate electrode of the thin film transistor, the first internal conducting line electrically connected to the extractor terminal;
a second internal conducting line formed over the first substrate; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the first internal conducting line is electrically connected to the counter electrode and the second internal conducting line is electrically connected to the counter electrode, and
wherein the scanning line driver circuit is formed between the pixel region and the second internal conducting line.
5. The active matrix display device according to any one of claims 2 , 3 , and 4 , wherein the thin film transistor is a top-gate thin film transistor.
6. The active matrix display device according to any one of claims 2 , 3 , and 4 , wherein the thin film transistor is a bottom-gate thin film transistor.
7. The active matrix display device according to any one of claims 2 , 3 , and 4 , wherein the pixel electrode is made of a transparent film.
8. The active matrix display device according to any one of claims 2 , 3 , and 4 , wherein the scanning line driver circuit is interposed between the first substrate and the second substrate.
9. The active matrix display device according to any one of claims 2 , 3 , and 4 , further comprising a signal line driver circuit formed over the first substrate and electrically connected to the thin film transistor.
10. The active matrix display device according to claim 9 , wherein the signal line driver circuit is interposed between the first substrate and the second substrate.
11. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal including a conductive layer and a contact hole formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
a common contact portion including a conductive pad and an insulating film formed over the first substrate wherein the conductive pad is formed from a same film as the pixel electrode;
an internal conducting line formed from a same film as a gate electrode of the thin film transistor, the internal conducting line electrically connected to the conductive layer through the contact hole; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the conductive pad is electrically connected to the internal conducting line through a plurality of openings in the insulating film, and
wherein the internal conducting line is electrically connected to the counter electrode through the common contact portion.
12. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit formed over the first substrate and electrically connected to the thin film transistor;
an extractor terminal including a conductive layer and a contact hole formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
a common contact portion including a conductive pad and an insulating film formed over the first substrate wherein the conductive pad is formed from a same film as the pixel electrode;
a first internal conducting line formed from a same film as a gate electrode of the thin film transistor, the first internal conducting line electrically connected to the conductive layer through the contact hole;
a second internal conducting line formed over the first substrate; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the conductive pad is electrically connected to the first internal conducting line through a plurality of openings in the insulating film,
wherein the first internal conducting line and the second internal conducting line are electrically connected to the counter electrode through the common contact portion, and
wherein the scanning line driver circuit is formed between the pixel region and the second internal conducting line.
13. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a conductive layer and a contact hole formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
an internal conducting line formed from a same film as a gate electrode of the thin film transistor, the internal conducting line electrically connected to the conductive layer through the contact hole; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the internal conducting line is electrically connected to the counter electrode.
14. An active matrix display device comprising:
a pixel region including a thin film transistor formed over a first substrate and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a conductive layer and a contact hole formed over the first substrate wherein the conductive layer is formed from a same film as the pixel electrode;
a common contact portion including a conductive pad and an insulating film formed over the first substrate wherein the conductive pad is formed from a same film as the pixel electrode;
an internal conducting line formed from a same film as a gate electrode of the thin film transistor, the internal conducting line electrically connected to the conductive layer through the contact hole; and
a counter electrode formed adjacent to a second substrate wherein the second substrate is opposed to the first substrate so that the counter electrode covers at least the pixel region,
wherein the conductive pad is electrically connected to the internal conducting line through a plurality of openings in the insulating film, and
wherein the internal conducting line is electrically connected to the counter electrode through the common contact portion.
15. The active matrix display device according to any one of claims 11 to 14 , wherein the thin film transistor is a top-gate thin film transistor.
16. The active matrix display device according to any one of claims 11 to 14 , wherein the thin film transistor is a bottom-gate thin film transistor.
17. The active matrix display device according to any one of claims 11 to 14 , wherein the pixel electrode is made of a transparent film.
18. The active matrix display device according to claim 11 or claim 12 , wherein the scanning line driver circuit is interposed between the first substrate and the second substrate.
19. The active matrix display device according to claim 11 or claim 12 , further comprising a signal line driver circuit formed over the first substrate and electrically connected to the thin film transistor.
20. The active matrix display device according to claim 19 , wherein the signal line driver circuit is interposed between the first substrate and the second substrate.