IP Library Granted Patent US 8,911,653
Granted Patent B2
US 8,911,653 · App. 12/781,876 · Granted Dec 16, 2014

Method for manufacturing light-emitting device

Inventors: Shunpei Yamazaki (Tokyo, JP); Kaoru Hatano (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/0097H01L51/5237Y02E10/549H01L51/56
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Quick Facts
Patent No.
US 8,911,653
App. No.
12/781,876
Granted
Dec 16, 2014
Kind
B2
Abstract

An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.

Claims (33)

1. A method for manufacturing a light-emitting device comprising the steps of:

forming a light-emitting panel having a shape of a flat plate;

processing the light-emitting panel having the shape of the flat plate into a shape at least partly curved;

fixing the light-emitting panel having the shape at least partly curved; and

forming a protective film to cover an entire surface of the light-emitting panel having the shape at least partly curved after the fixing of the light-emitting panel into the shape at least partly curved,

wherein the entire surface of the light-emitting panel is covered with only the protective film.

2. The method for manufacturing a light-emitting device according to claim 1 further comprising the steps of:

providing a supporting member in contact with an outer side or an inner side of the light-emitting panel having the shape at least partly curved so as to maintain the shape of the light-emitting panel before forming the protective film.

3. The method for manufacturing a light-emitting device according to claim 1 further comprising the steps of:

providing a supporting member in contact with the protective film to cover an outer side or an inner side of the light-emitting panel having the shape at least partly curved so as to maintain the shape of the light-emitting panel after forming the protective film.

4. The method for manufacturing a light-emitting device according to claim 1 ,

wherein the protective film is formed with a sputtering method.

5. The method for manufacturing a light-emitting device according to claim 1 ,

wherein the protective film comprises silicon nitride.

6. A method for manufacturing a light-emitting device comprising the steps of:

forming a light-emitting panel having a shape of a flat plate, a method for forming the light-emitting panel comprising the steps of:

forming an element layer over a substrate;

transferring the element layer from the substrate to a supporting substrate;

transferring the element layer from the supporting substrate to a first sealing member having a shape of a flat plate;

forming a light-emitting element electrically connected to the element layer; and

forming a second sealing member over the element layer and the light-emitting element;

processing the light-emitting panel having the shape of the flat plate into a shape at least partly curved;

fixing the light-emitting panel having the shape at least partly curved; and

forming a protective film to cover an entire surface of the light-emitting panel having the shape at least partly curved after the fixing of the light-emitting panel into the shape at least partly curved,

wherein the entire surface of the light-emitting panel is covered with only the protective film.

7. The method for manufacturing a light-emitting device according to claim 6 further comprising the steps of:

providing a supporting member in contact with an outer side or an inner side of the light-emitting panel having the shape at least partly curved so as to maintain the shape of the light-emitting panel before forming the protective film.

8. The method for manufacturing a light-emitting device according to claim 6 further comprising the steps of:

providing a supporting member in contact with the protective film to cover an outer side or an inner side of the light-emitting panel having the shape at least partly curved so as to maintain the shape of the light-emitting panel after forming the protective film.

9. The method for manufacturing a light-emitting device according to claim 6 ,

wherein the protective film is formed with a sputtering method.

10. The method for manufacturing a light-emitting device according to claim 6 ,

wherein the protective film comprises silicon nitride.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2010
From: YAMAZAKI, SHUNPEI; HATANO, KAORU
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 024623/0710 →
Priority Claims (1)
JP 2009-122664 · May 21, 2009 · national
Continuity (1)
Related Publication 20100293782A1 · Nov 25, 2010