Method and device for programming data into non-volatile memories

1. A method comprising:

programming data into a non-volatile memory with a first programming mode;

generating a control signal; and

changing over the data programming to a second, different programming mode in response to the generated control signal,

wherein, in the first programming mode, the programming of the memory cells is checked and, if appropriate, individual memory cells are reprogrammed, and wherein, in the second programming mode, programming is effected without checking and reprogramming; and

wherein programming in the second programming mode has a shorter programming time and a shorter data retention time in comparison with the first programming mode.

2. a method comprising:

programming data into a non-volatile memory with a first programming mode;

generating a control signal; and

changing over the data programming to a second, different programming mode in response to the generated control signal,

wherein the first programming mode is a programming mode in which, for programming a data value into a memory cell, a programming pulse can be repeated one or a plurality of times, and wherein the second programming mode is a programming mode in which, for programming a data value, a programming pulse is applied only once; and

wherein programming in the second programming mode has a shorter programming time and a shorter data retention time in comparison with the first programming mode.

3. The method of claim 1 , wherein a memory cell of the non-volatile memory has a field effect transistor with a floating gate for storing information.

4. The method of claim 3 , wherein a programming operation for programming a data value into a memory cell comprises Fowler-Nordheim tunneling.

5. The method of claim 3 , wherein the non-volatile memory is a flash memory.

6. The method of claim 5 , wherein an erase operation for erasing memory cells of the memory terminates upon the occurrence of the control signal, wherein the erase operation is not started in the second programming mode.

7. The method of claim 1 , wherein the method furthermore comprises:

monitoring the output signals of at least one sensor element;

determining whether a first state is present, depending on the monitored output signals; and

generating the control signal on the basis of the determination that the first state is present.

8. The method of claim 7 , wherein the first state indicates a crash of a means of transport.

9. A method comprising:

programming data into a non-volatile memory with a first programming mode;

generating a control signal;

changing over to the data programming to a second, different programming mode in response to the generated control signal;

generating a further control signal;

changing over to the first programming mode in response to the generated further control signal; and

marking the data writing to memory cells in the first programming mode as invalidly written data depending on the occurrence of the further control signal.

10. The method of claim 9 , wherein the data values of the data written to memory cells in the second programming mode are programmed anew after the changeover to the first programming mode.

11. The method of claim 9 , wherein an erase operation for erasing memory cells of the memory terminates on the basis of the occurrence of the control signal, and wherein the interrupted erase operation for erasing memory cells is carried out anew on the basis of the occurrence of the further control signal.

12. A device, comprising:

a non-volatile memory; and

a control unit configured to control a programming mode associated with the non-volatile memory, and configured to change over a programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on an occurrence of a control signal,

wherein the device is configured to carry out, in the first programming mode, a checking of the preprogramming of the memory cells and, if appropriate, reprogramming of individual memory cells and to carry out, in the second programming mode, a programming without checking and reprogramming; and

wherein programming in the second programming mode has a shorter programming time and a shorter data retention time in comparison with the first programming mode.

13. A device, comprising:

a non-volatile memory; and

a control unit configured to control a programming mode associated with the non-volatile memory, and configured to change over a programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on an occurrence of a control signal,

wherein the first programming mode is a programming mode in which, for programming a data vale into a memory cell, a programming pulse is selectively repeated one or a plurality of times, and wherein the second programming mode is a programming mode in which, for programming a data value, a programming pulse is applied only once; and

wherein programming in the second programming mode has a shorter programming time and a shorter data retention time in comparison with the first programming mode.

14. The device of claim 12 , wherein a memory cell of the non-volatile memory comprises a transistor with a floating gate for storing information.

15. The device of claim 14 , wherein the non-volatile memory is configured so that the memory cells of the non-volatile memory are programmed by Fowler-Nordheim tunneling.

16. The device of claim 14 , wherein the non-volatile memory is a flash memory.

17. The device of claim 12 , wherein the control unit is configured to terminate an erase operation for erasing memory cells of the non-volatile memory upon the occurrence of the control signal, without the erase operation being started again during the second programming mode.

18. The device of claim 12 , wherein the control unit is furthermore configured to generate the control signal depending on output signals of at least one sensor element.

19. The device of claim 18 , wherein the control unit is configured to generate the control signal upon identification of a crash of a means of transport.

20. A device, comprising:

a non-volatile memory; and

a control unit configured to control a programming mode associated with the non-volatile memory, and configured to change over a programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on a occurrence of a control signal,

wherein the unit is further configured to generate a further control signal and to change over to the first programming mode based on an occurrence of the further control signal and to mark the data written to memory cells in the first programming mode as invalidly written data.

21. The device of claim 20 , wherein the control unit is configured to program anew data values of the data written to memory cells in the second programming mode after the changeover to the first programming mode.

22. The device of claim 20 , wherein the control unit is configured to terminate an erase operation for erasing memory cells of the non-volatile memory based on an occurrence of one control signal and to carry out anew the interrupted erase operation for erasing memory cells based on an occurrence of the further control signal.

23. An airbag system comprising: an apparatus configured to trigger an airbag; and a device, comprising: a non-volatile memory; and a control unit configured to control a programming mode associated with the non-volatile memory, and configured to change over a programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on an occurrence of a control signal associated with a trigger of the airbag, wherein programming in the second programming mode has a shorter programming time and a shorter data retention time in comparison with the first programming mode.