IP Library Granted Patent US 8,920,662
Granted Patent B2
US 8,920,662 · App. 13/775,918 · Granted Dec 30, 2014

Nozzle plate manufacturing method, nozzle plate, droplet discharge head manufacturing method, droplet discharge head, and printer

Inventor: Junichi Takeuchi (Chino, JP)
Assignee: Seiko Epson Corporation
B41J2/162B41J2/1632B41J2/1628
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Quick Facts
Patent No.
US 8,920,662
App. No.
13/775,918
Granted
Dec 30, 2014
Kind
B2
Abstract

A nozzle plate manufacturing method that offers excellent protection against discharge liquid and that enables a nozzle plate having high nozzle-hole accuracy to be manufactured with good yield. The invention also provides a nozzle plate, a droplet discharge head manufacturing method, and a droplet discharge head.

Claims (70)

1. A method for manufacturing a plate, the method comprising:

forming a first etching mask on a first surface of a silicon substrate;

forming a first depression in the first surface of the silicon substrate by a first etching;

removing the first etching mask;

forming a first liquid-resistant protective film on the silicon substrate, the first liquid-resistant protective film having liquid resistance;

bonding a support substrate to the first surface of the silicon substrate, the support substrate supporting the silicon substrate;

reducing the silicon substrate to a desired thickness from a second surface side opposite to the first surface;

forming a second etching mask on the second surface of the silicon substrate;

forming a second depression in the second surface of the silicon substrate by a second etching; and

detaching the support substrate from the silicon substrate.

2. The method according to claim 1 , further comprising:

forming a liquid repellent layer on the first liquid-resistant protective film, the liquid repellent layer having liquid repellency, and

removing a part of the first liquid-resistant protective film and a part of the liquid repellent layer.

3. The method according to claim 2 , further comprising:

forming a second liquid-resistant protective film on the silicon substrate, the second liquid-resistant protective film having liquid resistance.

4. The method according to claim 1 , wherein

a thickness of the silicon substrate is reduced by grinding.

5. The method according to claim 1 , wherein

the first depression and the second depression are formed by dry etching.

6. The method according to claim 1 , wherein

the second depression is formed by isotropic dry etching.

7. The method according to claim 1 , wherein

the second depression is formed by anisotropic dry etching.

8. The method according to claim 1 , wherein

an open area of the second depression is larger than an open area of the first depression.

9. The method according to claim 1 , wherein

a cross sectional area of the second depression parallel to the first surface gradually increases from the first surface toward the second surface.

10. The method according to claim 1 , wherein

the first liquid-resistant protective film is a thermal oxidation film.

11. A method for manufacturing a nozzle plate, the method comprising:

forming the nozzle plate by using the method according to claim 1 .

12. A method for manufacturing a droplet discharge head, which includes a nozzle plate that has a plurality of nozzle holes from which a liquid is discharged, a cavity substrate that has a plurality of cavities in which the liquid is contained, and a pressure generator that discharges the liquid to the cavities, the method comprising:

forming the nozzle plate by using the method according to claim 1 .

13. A method for manufacturing a plate, the method comprising:

forming a first etching mask on a first surface of a silicon substrate;

forming a first depression in the first surface of the silicon substrate by a first etching;

removing the first etching mask;

forming a first liquid-resistant protective film on the silicon substrate, the first liquid-resistant protective film having liquid resistance;

reducing the silicon substrate to a desired thickness from a second surface side opposite to the first surface;

forming a second etching mask on the second surface of the silicon substrate;

forming a second depression in the second surface of the silicon substrate by a second etching; and

removing the first liquid-resistant protective film.

14. The method according to claim 13 , further comprising:

forming a second liquid-resistant protective film on the silicon substrate, the second liquid-resistant protective film having liquid resistance.

15. The method according to claim 14 , further comprising:

forming a liquid repellent layer on the silicon substrate, the liquid repellent layer having liquid repellency.

16. The method according to claim 13 , further comprising:

forming a liquid repellent layer on the silicon substrate, the liquid repellent layer having liquid repellency.

17. The method according to claim 13 , wherein

when the first liquid-resistant protective film is removed, an area that includes the second depression is removed.

18. The method according to claim 13 , wherein

when the first liquid-resistant protective film is removed, an outer circumference of the silicon substrate is not removed.

19. The method according to claim 13 , wherein

a thickness of the silicon substrate is reduced by grinding.

20. The method according to claim 13 , wherein

the first depression and second depression are formed by dry etching.

21. The method according to claim 13 , wherein

the second depression is formed by isotropic dry etching.

22. The method according to claim 13 , wherein

the second depression is formed by anisotropic dry etching.

23. The method according to claim 13 , wherein

an open area of the second depression is larger than an open area of the first depression.

24. The method according to claim 13 , wherein

a cross sectional area of the second depression parallel to the first surface gradually increases from the first surface toward the second surface.

25. The method according to claim 13 , wherein

the first liquid-resistant protective film is a thermal oxidation film.

26. A method for manufacturing a nozzle plate, the method comprising:

forming the nozzle plate by using the method according to claim 13 .

27. A method for manufacturing a droplet discharge head, which includes a nozzle plate that has a plurality of nozzle holes from which a liquid is discharged, a cavity substrate that has a plurality of cavities in which the liquid is contained, and a pressure generator that discharges the liquid to the cavities, the method comprising:

forming the nozzle plate by using the method according to claim 13 .

Priority Claims (1)
JP 2009-088694 · Apr 1, 2009 · national
Continuity (2)
Continuation 12730672 · Mar 24, 2010
Related Publication 20130162720A1 · Jun 27, 2013