Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide.
1. A semiconductor device comprising:
a semiconductor layer disposed above a substrate;
an insulating film formed in the semiconductor layer so that a sidewall of the insulating film is in contact with the semiconductor layer; and
a source electrode and a drain electrode provided so as to be in contact with at least one of a first semiconductor layer and a second semiconductor layer which are included in the semiconductor layer,
wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide,
wherein the semiconductor layer includes a third semiconductor layer and a fourth semiconductor layer and a bottom surface of the insulating film is in contact with the fourth semiconductor layer.
2. The semiconductor device according to claim 1 , wherein the insulating film further includes aluminum oxide.
3. The semiconductor device according to claim 1 , wherein the semiconductor layer includes a nitride semiconductor.
4. The semiconductor device according to claim 3 , wherein the semiconductor layer includes a nitride of at least one element selected from the group consisting of Ga, Al, and In.
5. The semiconductor device according to claim 1 , further comprising, bringing the portion of the semiconductor layer into contact with supercritical water or water at a temperature of higher than 100° C. and 700° C. or lower to form the insulating film.
6. The semiconductor device according to claim 1 , wherein the first semiconductor layer includes GaN.
7. The semiconductor device according to claim 1 , wherein the second semiconductor layer includes AlGaN.
8. The semiconductor device according to claim 1 , further comprising: a protective film including an insulator and disposed above the semiconductor layer.
9. The semiconductor device according to claim 1 , wherein the insulating film is formed by oxidizing a portion of the semiconductor layer.
10. The semiconductor device according to claim 1 , wherein a portion of the insulating film is buried in the semiconductor layer.
11. An electronic apparatus comprising:
an input circuit;
an output circuit; and
a semiconductor device provided between the input circuit and the output circuit,
the semiconductor device includes;
a semiconductor layer disposed above a substrate;
an insulating film formed in the semiconductor layer so that a sidewall of the insulating film is in contact with the semiconductor layer; and
a source electrode and a drain electrode provided so as to be in contact with at least one of a first semiconductor layer and a second semiconductor layer which are included in the semiconductor layer,
wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide,
wherein the semiconductor layer includes a third semiconductor layer and a fourth semiconductor layer and a bottom surface of the insulating film is in contact with the fourth semiconductor layer.
12. An electronic apparatus according to claim 11 , wherein the electronic apparatus includes one of a power supply device and an amplifier.
13. The electronic apparatus according to claim 11 , wherein the insulating film is formed by oxidizing a portion of the semiconductor layer.
14. The electronic apparatus according to claim 11 , wherein a portion of the insulating film is buried in the semiconductor layer.