Field effect transistor, method for producing the same, and electronic device
The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112 , a channel layer 113 , a barrier layer 114 , and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112 , the channel layer 113 having a compressive strain, and the barrier layer 114 having a tensile strain, and the spacer layer 115 having a compressive strain are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115 . The gate electrode 15 is arranged on the gate insulating film 14 . The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
1. A field effect transistor comprising:
a substrate;
a buffer layer;
a channel layer;
a barrier layer;
a spacer layer;
a gate insulating film;
a gate electrode;
a source electrode; and
a drain electrode, wherein
the buffer layer is formed of lattice-relaxed Al x Ga 1-x N (0<x<1),
the channel layer is formed of Al y Ga l-y N (0<y <x) with an Al composition ratio less than the buffer layer,
the barrier layer is formed of Al y Ga 1-y N (x<z≦1) with an Al composition ratio greater than the buffer layer,
the spacer layer is formed of Al u Ga 1-u N (0≦u<x) with an Al composition ratio less than the buffer layer,
each of the upper surfaces of the buffer layer, the channel layer, the barrier layer, and the spacer layer is a Ga plane or an Al plane that is perpendicular to a (0001) crystal axis,
the buffer layer, the channel layer, the barrier layer, and the space layer are laminated on the substrate in this order,
the gate insulating film is arranged on the spacer layer,
the gate electrode is arranged on the gate insulating film, and
the source electrode and the drain electrode are electrically connected to the channel layer directly or via another component.
2. The field effect transistor according to claim 1 , wherein the Al composition ratio x of the buffer layer is 0.05 or more to 0.2 or less.
3. The field effect transistor according to claim 1 , wherein
the Al composition ratio z of the barrier layer is 0.4 or more to 1 or less.
4. The field effect transistor according to claim 1 , wherein
the Al composition ratio y of the channel layer is 0.1 or less.
5. The field effect transistor according to claim 1 , wherein
the Al composition ratio u of the spacer layer is 0.1 or less.
6. A field effect transistor comprising:
a substrate;
a buffer layer;
a channel layer;
a barrier layer;
a spacer layer;
a gate electrode;
a gate insulating film;
a source electrode; and
a drain electrode, wherein
each of the buffer layer, the channel layer, the barrier layer, and the spacer layer is formed of a group-III nitride semiconductor,
each of the upper surfaces of the buffer layer, the channel layer, the barrier layer, and the spacer layer is a group-III atomic plane that is perpendicular to a (0001) crystal axis,
the buffer layer is lattice-relaxed,
the channel layer has a compressive strain,
the barrier layer has a tensile strain,
the spacer layer has a compressive strain,
the buffer layer, the channel layer, the barrier layer, and the spacer layer are laminated on the substrate in this order,
the gate insulating film is arranged on the spacer layer,
the gate electrode is arranged on the gate insulating film, and
the source electrode and the drain electrode are electrically connected to the channel layer directly or via another component.
7. The field effect transistor according to claim 6 , wherein the buffer layer is formed of GaN, AlGaN, InGaN, InAlN, or InAlGaN.
8. The field effect transistor according to claim 6 , wherein
the channel layer is formed of InGaN, InAlN, InA 1 GaN, or InN, and
a material for forming a channel layer has a band gap less than a material for forming a buffer layer.
9. The field effect transistor according to claim 6 , wherein
the barrier layer is formed of AlGaN, AlN, InGaN, InAlN, InAlGaN, or GaN, and
a material for forming a barrier layer has a band gap greater than a material for forming a buffer layer.
10. The field effect transistor according to claim 6 , wherein
the spacer layer is formed of InGaN, InAlN, InAlGaN, or InN, and
a material for forming a spacer layer has a band gap less than a material for forming a buffer layer.
11. The field effect transistor according to claim 1 , wherein
the barrier layer has a thickness of 1 nm or more to 10 nm or less.
12. The field effect transistor according to claim 1 , wherein
the spacer layer under the gate electrode has a thickness of 0.5 nm or more to 20nm or less.
13. The field effect transistor according to claim 1 , wherein
at least one of the semiconductor layers formed below the gate electrode contains a p-type impurity.
14. The field effect transistor according to claim 1 , further comprising:
an electron supply layer, wherein
the electron supply layer is arranged on the spacer layer,
an opening portion to be filled is formed from the upper surface of the electron supply layer to the upper surface of the spacer layer in a part of the electron supply layer,
the gate electrode and the gate insulating film are arranged so as to fill the opening portion to be filled,
the gate insulating film is in contact with the upper surface of the spacer layer, and
the source electrode and the drain electrode are in contact with the electron supply layer and are arranged so as to face each other across the gate electrode.
15. The field effect transistor according to claim 14 , wherein
the opening portion to be filled formed in a part of the electron supply layer is formed by removing a part of the electron supply layer.
16. The field effect transistor according to claim 14 , wherein
the electron supply layer is formed of AlGaN, AlN, InGaN, InAlN, InAlGaN, or GaN, and
a material for forming an electron supply layer has a band gap greater than a material for forming a buffer layer.
17. The field effect transistor according to claim 14 , wherein
the buffer layer is formed of lattice-relaxed Al x Ga 1-x N (0<x<1), and
the electron supply layer is formed of Al v Ga 1-v N (x<v≦1) with an Al composition ratio greater than the buffer layer.
18. The field effect transistor according to claim 1 , wherein
an n-type impurity containing region is formed in at least a part under the source electrode or the drain electrode; and
the n-type impurity containing region includes at least a part of the barrier layer.
19. The field effect transistor according to claim 1 , wherein
an opening portion to be filled or a notch portion is formed from the upper surface of the spacer layer to the upper surface of the barrier layer in at least a part of the spacer layer below the source electrode and the drain electrode, and
the source electrode and the drain electrode are in contact with the upper surface of the barrier layer and are arranged so as to face each other across the gate electrode.
20. The field effect transistor according to claim 19 , wherein
the opening portion to be filled or the notch portion formed in at least a part of the spacer layer is formed by removing a part of the spacer layer.
21. The field effect transistor according to claim 19 , wherein
an n-type impurity containing region is formed in at least a part under the source electrode or the drain electrode, and
the n-type impurity containing region includes at least a part of the barrier layer.
22. An electronic device comprising the field effect transistor according to claim 1 .