Heat transfer member and module with the same
A heat transfer member is disposed between a semiconductor element and an electrode plate. The heat transfer member comprises a metal portion extending between a first face at the semiconductor element side and a second face at the plate electrode side, and a ceramic portion surrounding the metal portion. An area of the first face is less than an area of the second face in the metal portion.
1. A heat transfer member to be disposed between a semiconductor element and an electrode plate, the heat transfer member comprising:
a metal portion extending between a first face on a semiconductor element side and a second face on a plate electrode side; and
a ceramic portion surrounding the metal portion, wherein
an area of the first face is less than an area of the second face in the metal portion.
2. The heat transfer member according to claim 1 , wherein
the metal portion is integrally formed with the plate electrode.
3. The heat transfer member according to claim 1 , wherein
the metal portion on the first face is located above an element region of the semiconductor element, and
the ceramic portion on the first face is located above a termination region of the semiconductor element.
4. A module comprising:
a cooler;
an insulating substrate disposed on the cooler;
a semiconductor element disposed on the insulating substrate;
a heat transfer member disposed on the semiconductor element, and
an electrode plate disposed on the heat transfer member, wherein
the heat transfer member includes:
a metal portion extending between a first face on the semiconductor element side and a second face on the plate electrode side; and
a ceramic portion surrounding the metal portion, and
an area of the first face is less than an area of the second face in the metal portion.
5. An electrode member to be disposed on a semiconductor element, the electrode member comprising:
a heat transfer portion to be located on the semiconductor element, and
an plate portion located on the heat transfer portion and extending sideward from a top of the heat transfer portion, wherein
the heat transfer portion comprises:
a metal portion; and
a ceramic portion surrounding the metal portion, wherein
an area of the metal portion at a face to be joined to the semiconductor element is less than an area of the metal portion at a boundary between the heat transfer portion and the plate portion.