Method of making interconnect structure

1. A method semiconductor device, comprising:

providing a Si-containing layer;

forming a metallic contact layer over said Si-containing layer, said contact layer including a metallic element;

forming a forming a barrier layer over said Si-containing layer, said barrier layer comprising a compound including said metallic element;

forming a metallic nucleation_seed layer over said barrier layer, said nucleation seed layer including said metallic element; and

forming a metallic interconnect layer over said nucleation seed layer,

wherein said contact layer, barrier layer and said nucleation_seed layer are formed in the same chamber without exposing said semiconductor device to the ambient atmosphere.

2. The method of claim 1 , wherein said metallic element is an element selected from the group consisting of W (tungsten), Ti (titanium), Ta (tantalum), Mo (molybdenum), and Co (cobalt).

3. The method of claim 1 , metallic element is W (tungsten).

4. The method of claim 1 , wherein said Si-containing layer comprises a silicide and/or a doped silicon.

5. The method of claim 1 , interconnect layer comprises at least wherein said one element selected from the group consisting of Cu (copper), Au (gold), and Ag (silver).

6. The method of claim 1 , wherein interconnect layer comprises Cu (copper).

7. The method of claim 6 , wherein said Cu (copper) is in form of pure copper and/or a copper alloy.

8. The method of claim 1 , wherein said forming said interconnect layer comprises an electrochemical deposition process.