Semiconductor device with selectively etched surface passivation
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.
1. A semiconductor device comprising:
a semiconductor substrate configured to include a channel;
a gate supported by the semiconductor substrate to control current flow through the channel;
a first dielectric layer supported by the semiconductor substrate and comprising an opening in which the gate is disposed;
a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel; and
first and second ohmic contacts spaced from one another and supported by the semiconductor substrate,
wherein the second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel but not in a third area over the channel in which the second dielectric layer is disposed on the surface, the third area abutting one of the first and second ohmic contacts.
2. The semiconductor device of claim 1 , wherein the second dielectric layer comprises a material having an etch selectivity to block an etchant of the first dielectric layer from reaching the surface of the semiconductor substrate.
3. The semiconductor device of claim 1 , wherein the second area is disposed between the gate and the first area.
4. The semiconductor device of claim 1 , wherein the opening in which the gate is disposed abuts the first area.
5. The semiconductor device of claim 1 , wherein:
the first and second ohmic contacts are disposed in respective further openings in the first and second dielectric layers; and
the third area is between the first ohmic contact and the gate and abuts one of the respective further openings.
6. The semiconductor device of claim 5 , wherein the first dielectric layer is not in contact with the surface of the semiconductor substrate between the gate and the second ohmic contact.
7. The semiconductor device of claim 1 , wherein the first dielectric layer comprises low pressure chemical vapor deposition (LPCVD) silicon nitride.
8. The semiconductor device of claim 1 , wherein the second dielectric layer comprises aluminum oxide.
9. The semiconductor device of claim 1 , wherein the semiconductor substrate comprises a Group III-nitride semiconductor layer.
10. The semiconductor device of claim 1 , wherein the second dielectric layer comprises an opening in which the gate is disposed to establish a Schottky junction at the surface of the semiconductor substrate.
11. The semiconductor device of claim 1 , wherein the gate is disposed in the opening over the second dielectric layer to establish a metal-insulator gate configuration at the surface of the semiconductor substrate.
12. A heterostructure field effect transistor (HFET) device comprising:
a semiconductor substrate comprising a base substrate and a Group III nitride semiconductor epitaxial layer supported by the base substrate and configured to include a channel, the semiconductor substrate further comprising at least one isolation region defining an active area along a surface of the semiconductor substrate;
first and second ohmic contacts spaced from one another and supported by the semiconductor substrate in the active area;
a gate supported by the semiconductor substrate to control current flow through the channel between the first and second ohmic contacts;
a first dielectric layer extending between the first and second ohmic contacts and comprising an opening in which the gate is disposed to establish a Schottky junction at the surface of the semiconductor substrate; and
a second dielectric layer disposed between the first dielectric layer and the surface of the semiconductor substrate in a first portion of the active area abutting the gate;
wherein the second dielectric layer is patterned such that the first dielectric layer passivates the surface of the semiconductor substrate in a second portion of the active area but not in a third portion of the active area over the channel in which the second dielectric layer is disposed on the surface, the third portion abutting one of the first and second ohmic contacts.
13. The HFET device of claim 12 , wherein:
the third portion of the active area abuts the first ohmic contact;
the second portion of the active area is disposed between the first portion and the third portion; and
the first dielectric layer does not passivate the semiconductor substrate between the gate and the second ohmic contact.
14. The HFET device of claim 12 , wherein the first dielectric layer comprises low pressure chemical vapor deposition (LPCVD) silicon nitride.
15. The HFET device of claim 12 , wherein the second dielectric layer comprises aluminum oxide.
16. The HFET device of claim 12 , wherein the second dielectric layer comprises a material having an etch selectivity to block an etchant of the first dielectric layer from reaching the surface of the semiconductor substrate.
17. The HFET device of claim 12 , wherein:
the first and second ohmic contacts are disposed in respective further openings in the first and second dielectric layers;
the third portion of the active area is between the first ohmic contact and the gate and abuts one of the respective further openings.
18. The HFET device of claim 17 , wherein the first dielectric layer is not in contact with the surface of the semiconductor substrate between the gate and the second ohmic contact.