IP Library Granted Patent US 8,952,434
Granted Patent B2
US 8,952,434 · App. 13/490,681 · Granted Feb 10, 2015

Magnetic patterns and methods of forming magnetic patterns

Inventor: Kyung-Tae Nam (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L43/12H01L27/228
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Quick Facts
Patent No.
US 8,952,434
App. No.
13/490,681
Granted
Feb 10, 2015
Kind
B2
Abstract

In a method of forming a magnetic pattern, a lower electrode layer is formed on a substrate. An insulating interlayer is formed on the lower electrode layer. The insulating interlayer is partially removed to form an opening. A first pinned layer pattern filling the opening is formed. A second pinned layer, a tunnel barrier layer, a free layer and an upper electrode layer are formed on the insulating interlayer and the first pinned layer pattern. The upper electrode layer, the free layer, the tunnel barrier layer and the second pinned layer are patterned to form a second pinned layer pattern, a tunnel barrier pattern, a free layer pattern and an upper electrode. The second pinned layer pattern covers an upper surface of the first pinned layer pattern.

Claims (9)

1. A magnetic pattern, comprising:

a lower electrode layer on a substrate;

an insulating interlayer on the lower electrode layer, the insulating interlayer having an opening therethrough;

a first pinned layer pattern filling the opening; and

a second pined layer pattern, a tunnel barrier layer pattern, a free layer pattern and an upper electrode sequentially stacked on the insulating interlayer and the first pinned layer pattern, the second pinned layer pattern covering an upper surface of the first pinned layer pattern,

wherein the second pinned layer pattern has a width greater than that of the first pinned layer pattern.

2. The magnetic pattern of claim 1 , further comprising an additional pinned layer pattern between the first pinned layer pattern and the second pinned layer pattern, the additional pinned layer pattern including the same material as that of the first pinned layer pattern.

3. The magnetic pattern of claim 1 , wherein the first pinned layer pattern and the second pinned layer pattern have a horizontal magnetization direction.

4. The magnetic pattern of claim 1 , wherein the first pinned layer pattern and the second pinned layer pattern have fixed vertical magnetization directions that are different from each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2012
From: NAM, KYUNG-TAE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028724/0924 →
Priority Claims (1)
KR 10-2011-0054374 · Jun 7, 2011 · national
Continuity (1)
Related Publication 20120315707A1 · Dec 13, 2012