Semiconductor device with stress relaxation during wire-bonding
The present teaching provides a semiconductor device capable of relaxing stress transferred to a contact region during wire bonding and improving reliability of wire bonding. A semiconductor device comprises contact regions, an interlayer insulating film, an emitter electrode, and a stress relaxation portion. The contact regions are provided at a certain interval in areas exposing at a surface of a semiconductor substrate. The interlayer insulating film is provided on the surface of the semiconductor substrate between adjacent contact regions. The emitter electrode is provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions. The stress relaxation portion is provided on an upper surface of the emitter electrode in an area only above the contact regions. The stress relaxation portion is formed of a conductive material. A Young's modulus of the material of the stress relaxation portion is lower than a Young's modulus of the material of the emitter electrode.
1. A semiconductor device comprising:
a plurality of contact regions formed in areas exposing at a surface of a semiconductor substrate at a certain interval;
an insulating film provided on the surface of the semiconductor substrate between adjacent contact regions;
a surface electrode provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions;
a stress relaxation portion provided on at least one part of an upper surface or an inside of the surface electrode in an area above the contact regions and the stress relaxation portion does not overlap with the insulating film; and
a bonding wire bonded on both of the surface electrode and the stress relaxation portion or both of the surface electrode above the stress relaxation portion and the surface electrode above the insulating film,
wherein the stress relaxation portion is formed of a first conductive material, and
the Young's modulus of the first conductive material of the stress relaxation portion when stress is applied in a direction perpendicular to the upper surface of the surface electrode is lower than the Young's modulus of a material of the surface electrode when stress is applied in the direction perpendicular to the upper surface of the surface electrode.
2. The semiconductor device according to claim 1 , wherein
the surface electrode includes titanium, aluminum, gold, silver, copper, or tungsten and
the bonding wire includes the same material as the surface electrode.
3. The semiconductor device according to claim 1
wherein the first conductive material includes polyaniline.
4. A semiconductor device comprising:
a plurality of contact regions formed in areas exposing at a surface of a semiconductor substrate at a certain interval;
an insulating film provided on the surface of the semiconductor substrate between adjacent contact regions;
a surface electrode provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions;
a stress relaxation portion provided on a lower surface of the surface electrode in an area above the contact regions and the stress relaxation portion does not overlap with the insulating film, wherein the stress relaxation portion is formed of a first conductive material,
a conductive portion formed of a second conductive material and between the surface electrode and the stress relaxation portion, and
a bonding wire bonded both of the surface electrode above the stress relaxation portion and the surface electrode above the insulating film;
wherein the Young's modulus of the first conductive material of the stress relaxation portion when stress is applied in a direction perpendicular to the upper surface of the surface electrode is lower than the Young's modulus of a material of the surface electrode when stress is applied in the direction perpendicular to the upper surface of the surface electrode; and
wherein the Young's modulus of the second conductive material when stress is applied in the direction perpendicular to the upper surface of the surface electrode is lower than the Young's modulus of the surface electrode and higher than the Young's modulus of the first conductive material when stress is applied in the direction perpendicular to the upper surface of the surface electrode.
5. The semiconductor device according to claim 4 , wherein
the surface electrode includes titanium, aluminum, gold, silver, copper, or tungsten and the bonding wire includes the same material as the surface electrode.
6. The semiconductor device according to claim 4
wherein the first conductive material includes polyaniline.
7. A semiconductor device comprising:
a plurality of contact regions formed in areas exposing at a surface of a semiconductor substrate at a certain interval;
a drift region formed in an area exposing at the surface of the semiconductor substrate between adjacent contact regions;
planar gate electrodes provided on an upper side of the semiconductor substrate;
a surface electrode provided on the upper side of the semiconductor substrate and electrically connected to a part of the contact regions;
a stress relaxation portion provided on at least one part of an upper surface or an inside of the surface electrode in an area above a region between adjacent planar gate electrodes and in which the stress relaxation portion does not overlap with the planar gate electrodes; and
a bonding wire bonded on both of the surface electrode and the stress relaxation portion or both of the surface electrode above the stress relaxation portion and the surface electrode above the insulating film,
wherein the stress relaxation portion is formed of a first conductive material, and
the Young's modulus of the first conductive material when stress is applied in a direction perpendicular to the upper surface of the surface electrode is lower than the Young's modulus of a material of the surface electrode when stress is applied in the direction perpendicular to the upper surface of the surface electrode.
8. The semiconductor device according to claim 7 , wherein
the surface electrode includes titanium, aluminum, gold, silver, copper, or tungsten and
the bonding wire includes the same material as the surface electrode.
9. The semiconductor device according to claim 7 ,
wherein the first conductive material includes polyaniline.