Semiconductor device and manufacturing method of semiconductor device
According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.
1. A semiconductor device comprising:
an assembly substrate;
a semiconductor chip joined to the assembly substrate through a jointing layer that is between the assembly substrate and the semiconductor chip the jointing layer including an alloy comprising:
at least one of Sn, Zn and In, and at least one of Cu, Ni, Ag, Cr, Zr, Ti and V; and
a soft metal layer between the jointing layer and the semiconductor chip and including any metal selected from Cu, Al, Zn and Ag, wherein
the jointing layer includes at least two phases of the alloy.
2. The semiconductor device of claim 1 , wherein a first phase of the alloy has a higher melting point than a second phase of the alloy.
3. The semiconductor device of claim 2 , wherein the second phase converts to the first phase during thermal cycling occurring during use of the semiconductor device.
4. The semiconductor device of claim 1 , further including a conductive metal region on the substrate, and, an alloy is formed between a portion of the conductive metal on the substrate and at least one of Sn, Zn and In.
5. A semiconductor device, comprising:
an assembly substrate;
a semiconductor chip joined to the assembly substrate through a jointing layer that is between the assembly substrate and the semiconductor chip and is an alloy comprising:
at least one of Sn, Zn and In, and
at least one of Cu, Ni, Ag, Cr, Zr, Ti and V; and
a soft metal layer between the jointing layer and the semiconductor chip and including any metal selected from Cu, Al, Zn and Ag; and
at least one layer of at least one of Cu, Ni, Ag, Cr, Zr, Ti and V which is not alloyed with Sn, In or Zn.
6. The semiconductor device of claim 1 , wherein the jointing layer includes at least two sub-layers and at least one of the sub-layers includes the at least two different phases of the alloy.
7. The semiconductor device of claim 6 , further comprising:
a layer of non-alloyed Cu, Ni, Ag, Cr, Zr, Ti or V.
8. The semiconductor device of claim 1 , further including a diffusion barrier layer arranged between the jointing layer and the soft metal layer and including any metal selected from Ni, Cr, Mo, Ta, V and W.
9. The semiconductor device of claim 1 , wherein the alloy is a copper-tin alloy.
10. The semiconductor device of claim 9 , wherein the soft metal layer has a thickness between 1 micron and 10 microns.
11. The semiconductor device of claim 1 , wherein the soft metal layer has a thickness between 1 micron and 10 microns.
12. The semiconductor device of claim 5 , wherein the alloy is a copper-tin alloy.
13. The semiconductor device of claim 12 , wherein the soft metal layer has a thickness between 1 micron and 10 microns.
14. The semiconductor device of claim 5 , wherein the soft metal layer has a thickness between 1 micron and 10 microns.