Dye-sensitized solar cell
A dye-sensitized solar cell of the present invention including: an electrode having, on one surface, a semiconductor layer with a sensitizing dye supported thereon, a counter electrode positioned opposing the semiconductor layer, and a charge transport layer disposed between the electrode and the counter electrode, wherein at least one of the electrode and the counter electrode is a transparent conductive film prepared by laminating an ITO film and an FTO film, and part or all of the crystal structure of the surface of the FTO film is orthorhombic.
1. A dye-sensitized solar cell comprising:
a first substrate;
a second substrate; and
a charge transport layer sandwiched between the first substrate and the second substrate; wherein
the first substrate comprises: a first base material; an electrode layer formed on a surface of the first base material; a semiconductor layer formed on a surface of the electrode layer while facing the second substrate; and a sensitizing dye supported on the semiconductor layer; and
the second substrate comprises a second base material; and a counter electrode layer formed on a surface of the second base material while facing the first substrate; and
at least one of said electrode layer and said counter electrode layer is a transparent conductive film prepared by laminating an ITO film and an FTO film, part or all of a crystal structure of a surface of said FTO film is orthorhombic, a thickness of said FTO film is within a range of from 5 to 20 nm, and a thickness of said ITO film is within a range of from 20 to 60 nm.
2. The dye-sensitized solar cell according to claim 1 , wherein a sheet resistance of said transparent conductive film is not more than 300 Ω/sq.
3. The dye-sensitized solar cell according to claim 1 , wherein a concentration of I 3 − contained within said charge transport layer exceeds 0 mol/dm 3 but is not more than 0.02 mol/dm 3 .
4. The dye-sensitized solar cell according to claim 2 , wherein a concentration of I 3 − contained within said charge transport layer exceeds 0 mol/dm 3 but is not more than 0.02 mol/dm 3 .