Light emitting composite with phosphor components
Disclosed herein are phosphor compositions having high gadolinium concentrations. Some embodiments include a thermally stable ceramic body comprising an emissive layer, wherein said emissive layer comprises a compound represented by the formula (A 1-x-z Gd x D z ) 3 B 5 O 12 , wherein: D is a first dopant selected from the group consisting of Nd, Er, Eu, Mn, Cr, Yb, Sm, Tb, Ce, Pr, Dy, Ho, Lu and combinations thereof; A is selected from the group consisting of Y, Lu, Ca, La, Tb, and combinations thereof; B is selected from the group consisting of Al, Mg, Si, Ga, In, and combinations thereof; x is in the range of about 0.20 to about 0.80; and z is in the range of about 0.001 to about 0.10. Also disclosed are thermally stable ceramic bodies that can include the composition of formula I. Methods of making the ceramic body and a lighting device including the ceramic body are also disclosed.
1. A thermally stable ceramic body comprising an emissive layer, wherein said emissive layer comprises:
a compound represented by the formula (A 1-x-z Gd x D z ) 3 B 5 O 12 , wherein:
D is a first dopant selected from the group consisting of Nd, Er, Eu, Mn, Cr, Yb, Sm, Tb, Ce, Pr, Dy, Ho, Lu and combinations thereof;
A is selected from the group consisting of Y, Lu, Ca, La, Tb, and combinations thereof;
B is selected from the group consisting of Al, Mg, Si, Ga, and In;
x is in the range of about 0.20 to about 0.80;
z is in the range of about 0.001 to about 0.10;
a first dopant concentration gradient along a thickness of the emissive layer, and
a Gd concentration gradient along the thickness of the emissive layer.
2. The ceramic body of claim 1 , wherein D comprises Ce.
3. The ceramic body of claim 2 , wherein D is Ce.
4. The ceramic body of claim 1 , wherein A is Y.
5. The ceramic body of claim 1 , wherein B is Al.
6. The ceramic body of claim 1 , wherein the ceramic body exhibits a thermal conductivity of at least 8 W/mK.
7. The ceramic body of claim 1 , wherein the first dopant concentration gradient comprises a maximum first dopant concentration at or near the center along the thickness of the emissive layer.
8. The ceramic body of claim 1 , wherein the first dopant concentration gradient comprises a maximum first dopant concentration at or near a surface along the thickness of the emissive layer.
9. The ceramic body of claim 1 , wherein the first dopant concentration gradient is broader relative to the Gd concentration gradient.
10. The ceramic body of claim 1 , wherein the Gd concentration gradient comprises a maximum Gd concentration at or near the maximum first dopant concentration along the thickness of the emissive layer.
11. A method of forming a thermally stable ceramic body comprising sintering an assembly, wherein the assembly comprises:
a co-doped layer having a thickness in the range of about 10 μm to about 400 μm, wherein the co-doped layer comprises:
yttrium aluminum garnet (YAG), a YAG precursor, or combination thereof;
a first dopant selected from the group consisting of Nd, Er, Eu, Mn, Cr, Yb, Sm, Tb, Ce, Pr, Dy, Ho, Lu and combinations thereof; and
about 20 at % to about 80 at % Gd relative to the amount of yttrium component in YAG, an equivalent amount of YAG precursor, or a combination thereof; and
a first layer having a thickness in the range of about 40 μm to about 800 μm disposed on one side of the doped layer, wherein the first layer comprises YAG, a YAG precursor, or combination thereof, wherein the first layer is substantially free of the first dopant.
12. The method of claim 11 , wherein the co-doped layer is disposed between the first layer and a second layer, the second layer comprising YAG, a YAG precursor, or combination thereof, wherein the second layer is substantially free of the first dopant, and wherein the first and second layers each independently have a thickness in the range of about 40 μm to about 400 μm.
13. The method of claim 12 , wherein the second layer further comprises Gd.
14. The method of claim 13 , wherein the second layer comprises about 20 at % to about 80 at % Gd.
15. The method of claim 11 , wherein the co-doped layer comprises about 0.1 at % to about 10 at % first dopant.
16. The method of claim 11 , wherein the first dopant is Ce.
17. The method of claim 11 , wherein sintering said assembly comprises heating the assembly at a temperature in the range of about 1000° C. to about 1900° C. for at least about 2 hrs.
18. The method of claim 11 , wherein at least about 30% of the first dopant in the co-doped layer diffuses out of the co-doped layer during said process.
19. The ceramic body made by the method of claim 11 .
20. A lighting apparatus comprising:
a light source configured to emit blue radiation; and
the ceramic body of claim 1 , wherein the ceramic body is configured to receive at a least a portion of the blue radiation.
21. A method of producing light comprising exposing the ceramic body of claim 1 to a blue radiation.