Nitride semiconductor light emitting device and fabrication method thereof
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
1. A light emitting device comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer on the active layer,
wherein the second conductive type semiconductor layer includes a p-type dopant,
wherein the second conductive type semiconductor layer has a doping profile comprising a plurality of peaks,
wherein the second conductive type semiconductor layer comprises a p-type GaN layer and a p-type AlGaN layer, and
wherein the plurality of peaks are disposed in the p-type GaN layer.
2. The light emitting device according to claim 1 , wherein the p-type AlGaN layer is in a range of 5 Å-200 Å.
3. The light emitting device according to claim 1 , wherein the active layer includes a InGaN well layer and an InGaN barrier layer.
4. The light emitting device according to claim 1 , wherein the first conductive type semiconductor layer includes a super lattice structure having at least two layers.
5. The light emitting device according to claim 1 , wherein the p-type dopant of the p-type GaN layer is more heavily doped than p-type dopant of the p-type AlGaN layer.
6. The light emitting device according to claim 1 , wherein the p-type AlGaN layer is disposed between the active layer and the p-type GaN layer.
7. The light emitting device according to claim 1 , wherein in the doping profile, a concentration of the p-type dopant non-linearly decreases from a center of a thickness of the p-type AlGaN layer to a center of a thickness of the p-type GaN layer.
8. The light emitting device according to claim 1 , wherein the p-type AlGaN layer includes Mg—Al—In.
9. The light emitting device according to claim 1 , wherein the first conductive type semiconductor layer is formed by growing repeatedly at least two times an undoped-AlGaN/doped-GaN super lattice structure.
10. A light emitting device comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer including a p-type dopant on the active layer,
wherein the second conductive type semiconductor layer comprises a doping profile having a plurality of peaks,
wherein the second conductive type semiconductor layer comprises a first p-type semiconductor layer and a second p-type semiconductor layer, and
wherein the plurality of peaks are formed in the second p-type semiconductor layer,
wherein the first conductive type semiconductor layer comprises an n-GaN layer formed by a Si—In simultaneous doping,
wherein a doping concentration range of In in the n-GaN layer is 1×10 19 /cm 3 -9×10 19 /cm 3 .
11. The light emitting device according to claim 10 , wherein the first conductive type semiconductor layer includes a super lattice structure having at least two layers.
12. The light emitting device according to claim 10 , wherein the first conductive type semiconductor layer has an overall thickness of less than 2 μm.
13. The light emitting device according to claim 10 , wherein the first conductive type semiconductor layer is formed by growing repeatedly at least two times an undoped-AlGaN/doped-GaN super lattice structure.
14. The light emitting device according to claim 10 , wherein the first p-type semiconductor layer comprises at least one of GaN, AlGaN or InGaN.
15. The light emitting device according to claim 10 , wherein the first p-type semiconductor layer is in a range of 10 Å-300 Å.
16. The light emitting device according to claim 10 , wherein in the doping profile, a concentration of the p-type dopant non-linearly decreases from a center of a thickness of the first p-type semiconductor layer to a center of a thickness of the second p-type semiconductor layer.
17. The light emitting device according to claim 10 , wherein the second p-type semiconductor layer includes Mg—Al—In.
18. The light emitting device according to claim 10 , wherein the second p-type semiconductor layer includes GaN.
19. The light emitting device according to claim 10 , wherein the first p-type semiconductor layer comprises a p-type AlGaN layer,
wherein the second p-type semiconductor layer comprises a p-type GaN layer and
wherein p-type dopant of at least one portion of the p-type GaN layer is more heavily doped than p-type dopant of the p-type AlGaN layer.
20. The light emitting device according to claim 10 , wherein the first conductive type semiconductor layer comprises an AlGaN/GaN super lattice structure of at least two layers.