Vertical conductive connections in semiconductor substrates
An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive path between the front side and the back side of the semiconductor body; and a conductive contact, defining a conductive path on the front side of the semiconductor body, between the active area and the vertical conductive connection, wherein the vertical conductive connection is formed on the lateral surface of the die, outside the active area.
1. A semiconductor device comprising:
a semiconductor die having a front surface and a back surface;
an active semiconductor sensor area on the front surface of said semiconductor die;
a semiconductor safety area in said semiconductor die surrounding said active sensor area;
at least one first conductor on said semiconductor safety area electrically coupled to said active sensor area;
at least one insulating layer extending vertically through the semiconductor safety area between the front and back surfaces of said substrate and laterally spaced apart from said active sensor area; and
at least one second conductor extending vertically through said semiconductor safety area and electrically insulated therefrom by said at least one insulating layer, said at least one second conductor electrically coupled to said at least one first conductor at the front surface of said substrate.
2. The semiconductor device of claim 1 wherein said active sensor area comprises a light sensor area.
3. The semiconductor device of claim 1 wherein said at least one first conductor comprises a lateral portion electrically coupled to said active sensor area and having a first shape, and a central portion electrically coupled to said lateral portion and to said at least one second conductor and having a second shape different than the first shape.
4. The semiconductor device of claim 3 wherein the first shape is a rectangular shape, and the second shape is a semi-cylindrical shape.
5. The semiconductor device of claim 4 wherein said at least one insulating layer has a hollow semi-cylindrical shape.
6. The semiconductor device of claim 5 wherein said at least one second conductor has a semi-cylindrical shape.
7. The semiconductor device of claim 1 wherein said at least one first conductor comprises a plurality thereof spaced apart on said semiconductor safety area around said active sensor area; and wherein said at least one insulating layer and said at least one second conductor comprises a respective insulating layer and second conductor for each first conductor.
8. The semiconductor device of claim 1 further comprising a conductive bump adjacent the back surface of said active sensor area electrically coupled with said at least one second conductor.
9. A sensor module comprising:
a substrate; and
at least one semiconductor device coupled to said substrate and comprising
a semiconductor die having a front surface and a back surface,
an active sensor area on the front surface of said semiconductor die,
a semiconductor safety area in said semiconductor die surrounding said active sensor area,
at least one first conductor on said semiconductor safety area electrically coupled to said active sensor area,
at least one insulating layer extending vertically through the semiconductor safety area between the front and back surfaces of said substrate and laterally spaced apart from said active sensor area, and
at least one second conductor extending vertically through said semiconductor safety area and electrically insulated therefrom by said at least one insulating layer, said at least one second conductor electrically coupled to said at least one first conductor at the front surface of said substrate.
10. The sensor module of claim 9 wherein said active sensor area comprises a light sensor area.
11. The sensor module of claim 9 wherein said at least one first conductor comprises a lateral portion electrically coupled to said active sensor area and having a first shape, and a central portion electrically coupled to said lateral portion and to said at least one second conductor and having a second shape different than the first shape.
12. The sensor module of claim 11 wherein the first shape is a rectangular shape, and the second shape is a semi-cylindrical shape.
13. The sensor module of claim 12 wherein said at least one insulating layer has a hollow semi-cylindrical shape.
14. The sensor module of claim 13 wherein said at least one second conductor has a semi-cylindrical shape.
15. The sensor module of claim 9 wherein said at least one first conductor comprises a plurality thereof spaced apart on said semiconductor safety area around said active sensor area; and wherein said at least one insulating layer and said at least one second conductor comprises a respective insulating layer and second conductor for each first conductor.
16. The sensor module of claim 9 further comprising a conductive bump adjacent the back surface of said active sensor area electrically coupled with said at least one second conductor and said substrate.