IP Library › Granted Patent US 8,974,918

Granted Patent B2

US 8,974,918 · App. 11/812,843 · Granted Mar 10, 2015

Display device and electronic device

Inventor: Shunpei Yamazaki (Setagaya, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

G02F1/13439 H01L27/12 H01L27/1214 H01L51/5206 H01L51/5221 H01L27/3248 H01L51/5052 H01L51/5228 Y10S428/917

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Quick Facts

Patent No.: US 8,974,918
App. No.: 11/812,843
Granted: Mar 10, 2015
Kind: B2

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Abstract

It is an object of the present invention to provide a display device without using an oxide light-transmitting conductive film which is necessary in a conventional method. In addition, it is another object of the present invention to provide an electronic device having a display device using a new electrode material. It is a summary of the present invention to form an electrode of a pixel or a pixel portion with a light-transmitting conductive film containing a hole-transporting organic compound and a metal oxide which shows an electron accepting property with respect to the hole-transporting organic compound. The hole-transporting organic compound and the metal oxide which shows an electron accepting property with respect to the hole-transporting organic compound are composed to have resistivity of less than or equal to 1×10 6 Ω·cm, thereby being able to serve as an electrode of a pixel. It is not necessary to form a transparent electrode using a particular premium grade material; therefore, the manufacture cost of an electronic device typified by a flat panel display can be reduced.

Claims (83)

1. A device comprising:

a partition layer directly over and in contact with an insulating surface, the partition layer has an opening portion in which part of the insulating surface is exposed;

an anode of a pixel comprising a light-transmitting conductive film, wherein the anode is directly over and in contact with a part of the partition layer and directly over and in contact with the part of the insulating surface; and

an electroluminescence layer directly over and in contact with the anode,

wherein an edge portion of the anode is covered by and directly in contact with the electroluminescence layer,

wherein the light-transmitting conductive film contains a hole-transporting organic compound and molybdenum oxide which shows electron acceptability with respect to the hole-transporting organic compound,

wherein the electroluminescence layer comprises at least a light-emitting layer, and

wherein the hole-transporting organic compound and the molybdenum oxide are in a mixed state in the light-transmitting conductive film.

2. The device according to claim 1 ,

wherein the light-transmitting conductive film does not have an absorption peak in a wavelength region of greater than or equal to 450 nm and less than or equal to 800 nm.

3. The device according to claim 1 ,

wherein the hole-transporting organic compound has hole mobility of greater than or equal to 1×10 −6 cm 2 /Vs.

4. The device according to claim 1 ,

wherein the hole-transporting organic compound is an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, or a high molecular compound.

5. The device according to claim 4 ,

wherein the aromatic amine compound is one or more kinds selected from N,N′-di(p-tolyl)-N,N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA); 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB); 4,4′-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD); or 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

6. The device according to claim 4 ,

wherein the carbazole derivative is one or more kinds selected from 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1); 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2); 3-[N-(1-naphtyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1); 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP); 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB); 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA); or 2,3,5,6-triphenyl-1,4-bis[4-(N-carbazolyl)phenyl]benzene.

7. The device according to claim 4 ,

wherein the aromatic hydrocarbon is one or more kinds selected from 9,10-di(naphthalen-2-yl)-2-tert-butylanthracene (abbreviation: t-BuDNA); 9,10-di(naphthalen-1-yl)-2-tert-butylanthracene; 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA); 9,10-di(4-phenylphenyl)-2-tert-butylanthracene (abbreviation: t-BuDBA); 9,10-di(naphthalen-2-yl)anthracene (abbreviation: DNA); 9,10-diphenylanthracene (abbreviation: DPAnth); 2-tert-butylanthracene (abbreviation: t-BuAnth); 9,10-di(4-methylnaphthalen-1-yl)anthracene (abbreviation: DMNA); 2-tert-butyl-9,10-bis[2-(naphthalen-1-yl)phenyl]anthracene; 9,10-bis[2-(naphthalen-1-yl)phenyl]anthracene; 2,3,6,7-tetramethyl-9,10-di(naphthalen-1-yl)anthracene; 2,3,6,7-tetramethyl-9,10-di(naphthalen-2-yl)anthracene; 9,9′-bianthryl; 10,10′-diphenyl-9,9′-bianthryl; 10,10′-di(2-phenylphenyl)-9,9′-bianthryl; 10,10′-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl; anthracene; tetracene; rubrene; perylene; 2,5,8,11-tetra(tert-butyl)perylene; 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi); or 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

8. The device according to claim 4 ,

wherein the high molecular compound is one or more kinds selected from poly{4-[N-(4-diphenylaminophenyl)-N-phenyl]aminostyrene} (abbreviation: PStDPA); poly{4-[N-(9-carbazol-3-yl)-N-phenylamino]styrene} (abbreviation: PStPCA); poly(N-vinylcarbazole) (abbreviation: PVK); or poly(4-vinyltriphenylamine) (abbreviation: PVTPA).

9. A device comprising:

a transistor having a gate electrode, a source region and a drain region;

a scanning line electrically connected to the gate electrode;

a signal line electrically connected to any one of the source region and the drain region;

an insulating film over the transistor;

a partition layer directly over and in contact with the insulating film, the partition layer has an opening portion in which part of the insulating film is exposed;

an anode of a pixel comprising a light-transmitting conductive film directly over and in contact with the part of the insulating film and directly over and in contact with a part of the partition layer; and

an electroluminescence layer directly over and in contact with the anode,

wherein an edge portion of the anode is covered by and directly in contact with the electroluminescence layer,

wherein the electroluminescence layer comprises at least a light-emitting layer, and

wherein the hole-transporting organic compound and the molybdenum oxide are in a mixed state in the light-transmitting conductive film.

10. The device according to claim 9 ,

wherein the light-transmitting conductive film does not have an absorption peak in a wavelength region of greater than or equal to 450 nm and less than or equal to 800 nm.

11. The device according to claim 9 ,

wherein the hole-transporting organic compound has hole mobility of greater than or equal to 1×10 −6 cm 2 /Vs.

12. The device according to claim 9 ,

wherein the hole-transporting organic compound is an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, or a high molecular compound.

13. The device according to claim 12 ,

14. The device according to claim 12 ,

15. The device according to claim 12 ,

16. The device according to claim 12 ,

17. A device comprising:

a partition layer directly over and in contact with an insulating surface, the partition layer has an opening portion in which part of the insulating surface is exposed;

an anode of a pixel comprising a light-transmitting conductive film, wherein the anode is directly over and in contact with the part of the insulating surface and directly over and in contact with a part of the partition layer;

an electroluminescence layer comprising at least a light emitting layer over and in contact with the light-transmitting conductive film; and

an electrode over and in contact with the electroluminescence layer,

wherein an edge portion of the anode is covered by and directly in contact with the electroluminescence layer,

wherein the hole-transporting organic compound and the molybdenum oxide are in a mixed state in the light-transmitting conductive film.

18. The device according to claim 17 ,

wherein the light-transmitting conductive film does not have an absorption peak in a wavelength region of greater than or equal to 450 nm and less than or equal to 800 nm.

19. The device according to claim 17 ,

wherein the hole-transporting organic compound has hole mobility of greater than or equal to 1×10 −6 cm 2 /Vs.

20. The device according to claim 17 ,

wherein the hole-transporting organic compound is an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, or a high molecular compound.

21. The device according to claim 20 ,

22. The device according to claim 20 ,

23. The device according to claim 20 ,

24. The device according to claim 20 ,

25. The device according to claim 17 , wherein the electroluminescence layer further comprises:

a first carrier injecting layer between the light-transmitting conductive film and the light emitting layer;

a first carrier transporting layer between the first carrier injecting layer and the light emitting layer;

a second carrier injecting layer between the electrode and the light emitting layer; and

a second carrier transporting layer between the second carrier injecting layer and the light emitting layer.

26. The device according to claim 25 ,

wherein the first carrier injecting layer is a hole injecting layer,

wherein the first carrier transporting layer is a hole transporting layer,

wherein the second carrier injecting layer is an electron injecting layer, and

wherein the second carrier transporting layer is an electron transporting layer.

27. The device according to claim 1 , wherein the light-transmitting conductive film has a resistivity of 5×10 4 to 1×10 6 Ω·cm.

28. The device according to claim 9 , wherein the light-transmitting conductive film has a resistivity of 5×10 4 to 1×10 6 Ω·cm.

29. The device according to claim 17 , wherein the light-transmitting conductive film has a resistivity of 5×10 4 to 1×10 6 Ω·cm.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2007

From: YAMAZAKI, SHUNPEI

To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Reel/Frame 019505/0549 →

Priority Claims (1)

JP 2006-184495 · Jul 4, 2006 · national

Continuity (1)

Related Publication 20080008905A1 · Jan 10, 2008