IP Library Granted Patent US 8,975,695
Granted Patent B2
US 8,975,695 · App. 14/253,932 · Granted Mar 10, 2015

Display device

Inventor: Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
B81B3/0083H01L27/1255H01L29/24
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Quick Facts
Patent No.
US 8,975,695
App. No.
14/253,932
Granted
Mar 10, 2015
Kind
B2
Abstract

A display device capable of operating at high speed and with low power consumption is provided. A miniaturized display device occupying a small area is also provided. The display device includes a support; a display portion which includes a pixel; a light-blocking unit which is in the support and includes a light-blocking layer having a first opening overlapping with at least part of the pixel, and a movable light-blocking layer blocking light passing through the first opening; a transistor which is electrically connected to the light-blocking unit and includes an oxide semiconductor film; and a capacitor electrically connected to the transistor.

Claims (77)

1. A display device comprising:

a display portion comprising a pixel; and

a control circuit comprising:

a light-blocking unit comprising a first layer and a second layer;

a first transistor electrically connected to the light-blocking unit; and

a capacitor electrically connected to the first transistor,

wherein:

the first layer has a first opening overlapping with at least part of the pixel,

the second layer is configured to block light passing through the first opening,

the first transistor comprises an oxide semiconductor film,

the capacitor comprises a first conductive film, and

the oxide semiconductor film and the first conductive film are on a same surface.

2. The display device according to claim 1 ,

the first transistor further comprising:

a gate electrode;

a gate insulating film in contact with the gate electrode, the oxide semiconductor film, and the first conductive film; and

a pair of conductive films in contact with the oxide semiconductor film.

3. The display device according to claim 1 ,

the control circuit further comprising:

a first insulating film covering the first transistor, and

the capacitor further comprising:

a second insulating film over the first insulating film; and

a second conductive film over the second insulating film,

wherein:

the first insulating film has a second opening on the first conductive film,

the second insulating film is in contact with the first conductive film in the second opening, and

the second conductive film is electrically connected to the first transistor.

4. The display device according to claim 3 ,

wherein the first insulating film is an oxide insulating film, and

wherein the second insulating film is a nitride insulating film.

5. The display device according to claim 1 , wherein each of the oxide semiconductor film and the first conductive film comprises at least one of In, Ga, and Zn.

6. The display device according to claim 1 , wherein the light-blocking unit is a MEMS shutter.

7. The display device according to claim 1 , further comprising:

a second transistor,

wherein:

the second transistor overlaps with the first transistor and the capacitor,

the second transistor is electrically connected to the first transistor and the capacitor, and

the second transistor is on a substrate including a semiconductor material.

8. A display device comprising:

a display portion comprising a pixel; and

a control circuit comprising:

a light-blocking unit comprising a first layer, a second layer, and an actuator;

a first transistor electrically connected to the light-blocking unit; and

a capacitor electrically connected to the first transistor,

wherein:

the first layer has a first opening overlapping with at least part of the pixel,

the second layer is configured to block light passing through the first opening,

the actuator comprises a movable electrode electrically connected to the second layer,

the actuator is configured to move the second layer,

the first transistor comprises an oxide semiconductor film,

the capacitor comprises a first conductive film, and

the oxide semiconductor film and the first conductive film are on a same surface.

9. The display device according to claim 8 ,

the first transistor further comprising:

a gate electrode;

a gate insulating film in contact with the gate electrode, the oxide semiconductor film, and the first conductive film; and

a pair of conductive films in contact with the oxide semiconductor film.

10. The display device according to claim 8 ,

the control circuit further comprising:

a first insulating film covering the first transistor, and

the capacitor further comprising:

a second insulating film over the first insulating film; and

a second conductive film over the second insulating film,

wherein:

the first insulating film has a second opening on the first conductive film,

the second insulating film is in contact with the first conductive film in the second opening, and

the second conductive film is electrically connected to the first transistor.

11. The display device according to claim 10 ,

wherein the first insulating film is an oxide insulating film, and

wherein the second insulating film is a nitride insulating film.

12. The display device according to claim 8 , wherein each of the oxide semiconductor film and the first conductive film comprises at least one of In, Ga, and Zn.

13. The display device according to claim 8 , further comprising:

a second transistor,

wherein:

the second transistor overlaps with the first transistor and the capacitor,

the second transistor is electrically connected to the first transistor and the capacitor, and

the second transistor is on a substrate including a semiconductor material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2014
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 032688/0472 →
Priority Claims (1)
JP 2013-088181 · Apr 19, 2013 · national
Continuity (1)
Related Publication 20140312342A1 · Oct 23, 2014