Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming an insulating film over a semiconductor substrate;

forming a conductive film over the insulating film;

forming a first ferroelectric film over the conductive film;

forming an amorphous second ferroelectric film over the first ferroelectric film;

forming a transition metal oxide material film containing ruthenium over the second ferroelectric film;

forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to an air;

annealing and crystallizing the second ferroelectric film after forming the first conductive metal oxide film;

patterning the first conductive metal oxide film to form a top electrode of a ferroelectric capacitor;

patterning the first ferroelectric film and the second ferroelectric film to form a capacitor dielectric film of the ferroelectric capacitor; and

patterning the conductive film to form a bottom electrode of the ferroelectric capacitor.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein a material of the transition metal oxide material film is a transition metal oxide having an ABO 3 type perovskite structure when crystallized.

3. The method of manufacturing a semiconductor device according to claim 2 , wherein the material of the transition metal oxide material film is any one selected from the group consisting of SrRuO 3 , CaRuO 3 , BaRuO 3 , La 4 Ru 2 O 10 , LaSrCoRuO 3 , LaSrRuO 3 , and LaSrMnRuO 3 .

4. The method of manufacturing a semiconductor device according to claim 1 , wherein in the forming the transition metal oxide material film, the transition metal oxide material film is formed by sputtering and is in an amorphous state upon completion of the film formation.

5. The method of manufacturing a semiconductor device according to claim 4 , wherein in the forming the transition metal oxide material film, a substrate temperature is set to equal to or higher than 20° C. and equal to or lower than 350° C.

6. The method of manufacturing a semiconductor device according to claim 4 , wherein the forming the transition metal oxide material film uses a sputter target to which a bismuth oxide is added.

7. The method of manufacturing a semiconductor device according to claim 4 , wherein in the forming the transition metal oxide material film, the sputtering is carried out by using a sputter gas from which oxygen is removed.

8. The method of manufacturing a semiconductor device according to claim 1 , wherein in the forming the transition metal oxide material film, the transition metal oxide material film is formed in a thickness equal to or larger than 0.5 nm and equal to or smaller than 3.0 nm.

9. The method of manufacturing a semiconductor device according to claim 1 , wherein the annealing and crystallizing the second ferroelectric film is carried out in an oxygen-containing atmosphere.

10. The method of manufacturing a semiconductor device according to claim 9 , wherein a flow rate of oxygen gas in the oxygen-containing atmosphere is equal to or more than 1% and equal to or less than 10%.

11. The method of manufacturing a semiconductor device according to claim 1 , wherein in the forming the first conductive metal oxide film, the substrate temperature is set to equal to or higher than 150° C. and equal to or lower than 350° C.

12. The method of manufacturing a semiconductor device according to claim 1 , the method further comprising:

forming a second conductive metal oxide film over the first conductive metal oxide film, the second conductive metal oxide film having a larger composition ratio of oxygen than the first conductive metal oxide film.

13. The method of manufacturing a semiconductor device according to claim 12 , wherein the first conductive metal oxide film and the second conductive metal oxide film are each made of an iridium oxide.

14. The method of manufacturing a semiconductor device according to claim 1 , wherein a material of each of the first ferroelectric film and the second ferroelectric film is an ABO 3 type ferroelectric oxide when crystallized.