IP Library Granted Patent US 8,986,458
Granted Patent B2
US 8,986,458 · App. 14/233,669 · Granted Mar 24, 2015

Plasma processing apparatus

Inventor: Shinya Akano (Osaka, JP)
Assignee: Chugai Ro Co., Ltd.
H01J37/32669C23C14/32C23C14/54H05H1/26H01J37/32009H01J37/32651H01J37/3266H01J37/32357
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Quick Facts
Patent No.
US 8,986,458
App. No.
14/233,669
Granted
Mar 24, 2015
Kind
B2
Abstract

The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2 a in which a processing target object 5 is held, and a plasma space 2 b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2 b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2 , between the holding space 2 a and the plasma space 2 b.

Claims (17)

1. A plasma processing apparatus comprising:

a chamber internally having a holding space in which a processing target is held, and a plasma space in which plasma is to be formed;

the holding space and the plasma space are arranged in one arrangement direction;

a plasma gun for emitting electrons from a direction perpendicular to the arrangement direction into the plasma space to form the plasma, the plasma gun having a convergent coil; and

at least one pair of opposed magnets for forming a magnetic flux passing through the chamber, between the holding space and the plasma space, the pair of opposed magnets being positioned between the convergent coil of the plasma gun and the processing target so that opposite polarities of the pair of opposed magnets are opposed to each other.

2. The plasma processing apparatus according to claim 1 , wherein positions of the opposed magnets are adjustable.

3. The plasma processing apparatus according to claim 2 , further comprising:

an electromagnetic shield for shielding the magnetic flux, in a portion around the holding space of the chamber.

4. The plasma processing apparatus according to claim 2 , wherein the opposed magnets include electromagnets and adjust an excitation current.

5. The plasma processing apparatus according to claim 2 , wherein the opposed magnets include a plurality of pairs of magnets.

6. The plasma processing apparatus according to claim 1 , further comprising:

an electromagnetic shield for shielding the magnetic flux, in a portion around the holding space of the chamber.

7. The plasma processing apparatus according to claim 6 , wherein the opposed magnets include electromagnets and adjust an excitation current.

8. The plasma processing apparatus according to claim 6 , wherein the opposed magnets include a plurality of pairs of magnets.

9. The plasma processing apparatus according to claim 1 , wherein the opposed magnets include electromagnets and adjust an excitation current.

10. The plasma processing apparatus according to claim 9 , wherein the opposed magnets include a plurality of pairs of magnets.

11. The plasma processing apparatus according to claim 1 , wherein the opposed magnets include a plurality of pairs of magnets.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2014
From: AKANO, SHINYA
To: CHUGAI RO CO., LTD.
Reel/Frame 032020/0184 →
Priority Claims (1)
JP 2012-180141 · Aug 15, 2012 · national
Continuity (1)
Related Publication 20140238301A1 · Aug 28, 2014