Semiconductor device and method of manufacturing the semiconductor device
An interlayer insulating film is formed. Then a first gate electrode and a second gate electrode are buried in the interlayer insulating film. Then, an anti-diffusion film is formed over the interlayer insulating film, over the first gate electrode, and over the second gate electrode. Then, a first semiconductor layer is formed over the anti-diffusion film which is present over the first gate electrode. Then, an insulating cover film is formed over the upper surface and on the lateral side of the first semiconductor layer and over the anti-diffusion film. Then, a semiconductor film is formed over the insulating cover film. Then, the semiconductor film is removed selectively to leave a portion positioned over the second gate electrode, thereby forming a second semiconductor layer.
1. A semiconductor device comprising:
a multilayer interconnect layer having a first interconnect layer and a second interconnect layer positioned over the first interconnect layer; and
a first transistor and a second transistor formed by using the first interconnect layer,
wherein the first transistor includes:
a first gate electrode buried in the first interconnect layer;
a first gate insulating film positioned over the first gate electrode;
a first semiconductor layer positioned over the first gate insulating film; and
an insulating cover film positioned below the second interconnect layer and covering the upper surface and the lateral side of the first semiconductor layer, and
wherein the second transistor includes:
a second gate electrode buried in the first interconnect layer;
a second gate insulating film positioned over the second gate electrode; and
a second semiconductor layer positioned over the second gate insulating film, positioned at least partially above the insulating cover film and formed of a material different from that of the first semiconductor layer.
2. The semiconductor device according to claim 1 ,
wherein the multilayer interconnect layer has an anti-diffusion film positioned between the first interconnect layer and the second interconnect layer, and
wherein the first gate insulating film and the second gate insulating film contain the anti-diffusion film.
3. The semiconductor device according to claim 2 ,
wherein the insulating cover film is positioned also below the semiconductor layer, and
wherein the second insulating film has the insulating cover film positioned below the second semiconductor layer.
4. The semiconductor device according to claim 1 ,
wherein the multilayer interconnect layer has an anti-diffusion film positioned between the first interconnect layer and the second interconnect layer,
wherein the anti-diffusion film has a first opening positioned over the first gate electrode, and
wherein the first gate insulating film is positioned in the first opening.
5. The semiconductor device according to claim 1 ,
wherein the multilayer interconnect layer has an anti-diffusion film positioned between the first interconnect layer and the second interconnect layer,
wherein the insulating cover film is formed also over the anti-diffusion film,
wherein a stacked film of the anti-diffusion film and the insulating cover film has a second opening positioned over the second gate electrode, and
wherein the second gate insulating film is positioned in the second opening.
6. The semiconductor device according to claim 1 ,
wherein the film thickness is different between the first gate insulating film and the second gate insulating film.
7. The semiconductor device according to claim 1 ,
wherein the conduction type of the first semiconductor layer and the second semiconductor layer is different from each other.
8. The semiconductor device according to claim 1 ,
wherein the conduction type of the first semiconductor layer and the second semiconductor layer is identical to each other.
9. A semiconductor device according to claim 1 , wherein
the insulating cover film contains one of SiN film, SiO 2 film, SiOC film, and SiOCH film.
10. The semiconductor device according to claim 2 ,
wherein the anti-diffusion film contains at least one of SiN film, SiCN film, and SiC film.
11. The semiconductor device according to claim 1 ,
wherein each of the first gate electrode and the second gate electrode comprises a Cu interconnect.
12. The semiconductor device according to claim 1 ,
wherein each of the first semiconductor layer and the second semiconductor layer comprises an oxide semiconductor layer.
13. The semiconductor device according to claim 12 ,
wherein the oxide semiconductor layer is, InGaZnO layer, InZnO layer, ZnO layer, ZnAlO layer, ZnCuO layer, NiO layer, SnO layer, SnO 2 layer, CuO layer, Cu 2 O layer, CuAlO layer, ZnO layer, ZnAlO layer, Ta 2 O 5 layer, or TiO 2 layer.