Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
1. A superluminescent diode comprising:
a substrate having an active region and an optical mode size conversion region;
waveguides including a ridge waveguide in the active region, a deep ridge waveguide in the optical mode size conversion region connected to the ridge waveguide;
an electrode disposed on the ridge waveguide;
planarizing layers disposed on an outside region of the ridge waveguide and the deep ridge waveguide on the substrate; and
a pad electrically connected to the electrode, the pad being disposed on the planarizing layers at the outside region of the ridge waveguide,
wherein the ridge waveguide comprises:
a clad layer; and
an ohmic contact layer disposed on the clad layer, the ohmic contact layer including a lower surface facing the substrate, an upper surface opposite to the lower surface and a side surface that connects the lower and upper surfaces, and
wherein the planarizing layers cover and contact the side surface of the ohmic contact layer.
2. The superluminescent diode of claim 1 , wherein the planarizing layers comprise polyimide or polymer benzocyclobutene (BCB).
3. The superluminescent diode of claim 1 , further comprising:
a lower clad layer disposed on the substrate of the active region;
an active layer disposed on the lower clad layer;
a first upper clad layer disposed on the active layer; and
an etch stop layer disposed on the first upper clad layer,
wherein:
the clad layer of the ridge waveguide extends in one direction on the etch stop layer.
4. The superluminescent diode of claim 3 , wherein the clad layer of the ridge waveguide and the ohmic contact layer have a reverse mesa structure or a forward mesa structure.
5. The superluminescent diode of claim 4 , further comprising a passive waveguide layer disposed between the lower clad layer and the substrate.
6. The superluminescent diode of claim 5 , wherein the deep ridge waveguide comprises a tapered waveguide region and a passive waveguide region extending from the ridge waveguide.
7. The superluminescent diode of claim 6 , wherein the tapered waveguide region comprises:
a linear waveguide region, a bent waveguide region, and a taped waveguide region.
8. The superluminescent diode of claim 1 , wherein:
the planarizing layers in the active region includes a lower surface facing the substrate and an upper surface opposite to the lower surface; and
the upper surface of the planarizing layers in the active region is flush with the upper surface of the ohmic contact layer.
9. A superluminescent diode comprising:
a substrate having an active region and an optical mode size conversion region;
waveguides including a ridge waveguide in the active region, a deep ridge waveguide in the optical mode size conversion region connected to the ridge waveguide;
an electrode disposed on the ridge waveguide;
planarizing layers disposed on an outside region of the ridge waveguide and the deep ridge waveguide on the substrate; and
a pad electrically connected to the electrode, the pad being disposed on the planarizing layers at the outside region of the ridge waveguide,
wherein the deep ridge waveguide comprises:
a buffer layer disposed on the substrate;
a passive waveguide layer disposed on the buffer layer; and
an upper clad layer surrounding the passive waveguide layer and the buffer layer and contacting with the substrate.
10. The superluminescent diode of claim 9 , wherein the upper clad layer has a high level in the optical mode size conversion region than the active region.
11. The superluminescent diode of claim 9 , wherein the passive waveguide layer extends to the active region,
wherein a width of the passive waveguide layer in the optical mode size conversion region is smaller than a width of the passive waveguide layer in the active region.
12. The superluminescent diode of claim 9 , wherein the passive waveguide layer having a fixed width extends along with the upper clad layer.
13. A wavelength-tunable external cavity laser comprising:
a housing;
an optical fiber withdrawn from one side of the inside of the housing to the outside:
a planar lightwave circuit (PLC) device disposed within the other side of the inside of the housing facing the optical fiber; and
a superluminescent diode comprising: a substrate having an active region and an optical mode size conversion region between the PLC device and the optical fiber; waveguides including a ridge waveguide in the active region, and a deep ridge waveguide in the optical mode size conversion region connected to the ridge waveguide; an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge and the deep ridge waveguide on the substrate; and a pad electrically connected to the electrode and disposed on the planarizing layers outside the ridge waveguide,
wherein the PLC device comprises a polymer optical waveguide, a Bragg grating, and a high reflective coating.
14. The wavelength-tunable external cavity laser of claim 13 , wherein the superluminescent diode further comprises a low reflective coating disposed on a sidewall of the ridge waveguide adjacent to the optical fiber.