Method of manufacturing semiconductor device
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
1. A light-emitting device comprising:
an organic compound film;
an inorganic insulating film over the organic compound film;
a first electrode over the inorganic insulating film;
a light-emitting layer over the first electrode;
a second electrode over the light-emitting layer;
an adhesive layer over the second electrode;
a flexible substrate over the adhesive layer; and
an integrated circuit between the organic compound film and the adhesive layer.
2. The light-emitting device according to claim 1 , wherein a thickness of the organic compound film is 5-100 μm.
3. The light-emitting device according to claim 1 , wherein the organic compound film functions as a support of the light-emitting device.
4. The light-emitting device according to claim 1 , wherein the first electrode comprises a transparent oxide film and a light-reflective metal film.
5. A lighting device comprising the light-emitting device according to claim 1 .
6. The light-emitting device according to claim 1 , further comprising a nonmetal inorganic film under the organic compound film.
7. The light-emitting device according to claim 6 , further comprising a metal oxide film under the nonmetal inorganic film.
8. A light-emitting device comprising:
an organic compound film;
an inorganic insulating film over the organic compound film;
a plurality of first electrodes over the inorganic insulating film;
a light-emitting layer over the plurality of first electrodes;
a plurality of second electrodes over the light-emitting layer;
an adhesive layer over the plurality of second electrodes;
a flexible substrate over the adhesive layer; and
an integrated circuit between the organic compound film and the adhesive layer,
wherein the plurality of first electrodes and the plurality of second electrodes are perpendicular to each other.
9. The light-emitting device according to claim 8 , wherein a thickness of the organic compound film is 5-100 μm.
10. The light-emitting device according to claim 8 , further comprising a plurality of partitions between the plurality of first electrodes.
11. The light-emitting device according to claim 10 , wherein each the plurality of partitions has a reverse tapered shape.
12. The light-emitting device according to claim 8 , wherein the organic compound film functions as a support of the light-emitting device.
13. The light-emitting device according to claim 8 , wherein the plurality of first electrodes each comprise a transparent oxide film and a light-reflective metal film.
14. A lighting device comprising the light-emitting device according to claim 8 .
15. The light-emitting device according to claim 8 , further comprising a nonmetal inorganic film under the organic compound film.
16. The light-emitting device according to claim 15 , further comprising a metal oxide film under the nonmetal inorganic film.
17. A light-emitting device comprising:
an organic compound film;
an inorganic insulating film over the organic compound film;
a first electrode over the inorganic insulating film;
a light-emitting layer over the first electrode;
a second electrode over the light-emitting layer;
an adhesive layer over the second electrode;
a flexible substrate over the adhesive layer; and
an integrated circuit between the organic compound film and the adhesive layer,
wherein the first electrode and the second electrode are perpendicular to each other.
18. The light-emitting device according to claim 17 , wherein a thickness of the organic compound film is 5-100 μm.
19. The light-emitting device according to claim 17 , wherein the organic compound film functions as a support of the light-emitting device.
20. The light-emitting device according to claim 17 , wherein the first electrode comprises a transparent oxide film and a light-reflective metal film.
21. A lighting device comprising the light-emitting device according to claim 17 .
22. The light-emitting device according to claim 17 , further comprising a nonmetal inorganic film under the organic compound film.
23. The light-emitting device according to claim 22 , further comprising a metal oxide film under the nonmetal inorganic film.