Light-emitting element
Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
1. A light-emitting element comprising:
a pair of electrodes; and
a light-emitting layer comprising a guest material and a host material between the pair of electrodes,
wherein an emission spectrum of the host material overlaps with a longest-wavelength-side absorption band in an absorption spectrum of the guest material, and
wherein phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material, and
wherein a difference between an energy value of a peak of the emission spectrum and an energy value of a peak of the lowest-energy-side absorption band in the absorption spectrum is 0.3 eV or less.
2. The light-emitting element according to claim 1 , wherein the longest-wavelength-side absorption band includes an absorption based on a triplet MLCT transition.
3. The light-emitting element according to claim 1 , wherein the emission spectrum is a fluorescent spectrum.
4. The light-emitting element according to claim 1 , wherein the guest material is an organometallic complex.
5. The light-emitting element according to claim 4 , wherein the guest material is an iridium complex.
6. The light-emitting element according to claim 1 , wherein a molar absorption coefficient of the longest-wavelength-side absorption band in the absorption spectrum is 5000 M −1 ·cm −1 or higher.
7. An electronic device comprising a light-emitting element comprising:
a pair of electrodes; and
a light-emitting layer comprising a guest material and a host material between the pair of electrodes,
wherein an emission spectrum of the host material overlaps with a longest-wavelength-side absorption band in an absorption spectrum of the guest material, and
wherein phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material, and
wherein a difference between an energy value of a peak of the emission spectrum and an energy value of a peak of the lowest-energy-side absorption band in the absorption spectrum is 0.3 eV or less.
8. The electronic device according to claim 7 , wherein the longest-wavelength-side absorption band includes an absorption based on a triplet MLCT transition.
9. The electronic device according to claim 7 , wherein the emission spectrum is a fluorescent spectrum.
10. The electronic device according to claim 7 , wherein the guest material is an organometallic complex.
11. The electronic device according to claim 7 , wherein the guest material is an iridium complex.
12. The electronic device according to claim 7 , wherein a molar absorption coefficient of the longest-wavelength-side absorption band in the absorption spectrum is 5000 M −1 ·cm −1 or higher.
13. A lighting device comprising a light-emitting element comprising:
a pair of electrodes; and
a light-emitting layer comprising a guest material and a host material between the pair of electrodes,
wherein an emission spectrum of the host material overlaps with a longest-wavelength-side absorption band in an absorption spectrum of the guest material, and
wherein phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material, and
wherein a difference between an energy value of a peak of the emission spectrum and an energy value of a peak of the lowest-energy-side absorption band in the absorption spectrum is 0.3 eV or less.
14. The lighting device according to claim 13 , wherein the longest-wavelength-side absorption band includes an absorption based on a triplet MLCT transition.
15. The lighting device according to claim 13 , wherein the emission spectrum is a fluorescent spectrum.
16. The lighting device according to claim 13 , wherein the guest material is an organometallic complex.
17. The lighting device according to claim 13 , wherein the guest material is an iridium complex.
18. The light-emitting element according to claim 13 , wherein a molar absorption coefficient of the longest-wavelength-side absorption band in the absorption spectrum is 5000 M −1 ·cm −1 or higher.