Driver circuit for driving power transistors

1. A driver circuit for controlling turn-off of a power transistor, comprising:

a converter comprising a first transistor and a second transistor coupled in series between a supply node and a reference node, wherein the converter is configured to receive a first signal and in response thereto generate a second signal for selectively controlling turn-off status of the power transistor,

wherein the first transistor is configured to have a first leakage current when set in the off state in response to said first signal;

wherein the second transistor is permanently set in the off state regardless of said first signal and is configured to have a second leakage current in the permanent off state; and

wherein the first leakage current of the first transistor is less than the second leakage current of the second transistor; and wherein the first transistor has a width-to-length ratio smaller than that of the second transistor.

2. The driver circuit of claim 1 , further comprising a first switch coupled to a gate of the power transistor; wherein the first switch is controlled by the second signal generated by the converter.

3. The driver circuit of claim 2 , wherein the first switch is a PMOS transistor having a gate configured to receive the second signal, a source coupled to the supply node and a drain coupled to the gate of the power transistor.

4. The driver circuit of claim 1 , wherein the first transistor is a PMOS transistor having a gate configured to receive the first signal, a source coupled to the supply node and a source of the power transistor, and a drain; and the second transistor is an NMOS transistor having a gate and a source connected together and coupled to the reference node, and a drain coupled to the drain of the first transistor at which the second signal is generated.

5. The driver circuit of claim 4 , wherein the second transistor is an NDMOS transistor and the first leakage current is a drain-to-source leakage current of the first transistor and the second leakage current is a drain-to-substrate leakage current of the second transistor.

6. The driver circuit of claim 1 , further comprising a voltage clamping module coupled between an output node where the second signal is generated and the supply node.

7. The driver circuit of claim 1 , further comprising a signal generator coupled to an input node of the converter, said signal generator configured to receive a control signal and generate the first signal in response to the control signal, said first signal applied to the input node.

8. The driver circuit of claim 7 , wherein the signal generator comprises:

a current source, a second switch and a resistor coupled in series;

wherein the second switch is coupled in between the current source and the resister;

wherein one end of the resistor is coupled with the supply node and one end of current source is coupled with the reference node; and

wherein the second switch is controlled by the control signal, and the first signal is outputted at a common node of the second switch and the resistor.

9. The driver circuit of claim 8 , wherein the second switch is an NMOS transistor having a gate configured to receive the control signal, a drain coupled with the resistor and a source coupled with the current source.

10. The driver circuit of claim 1 , wherein a magnitude of the first leakage current of the first transistor is less than a magnitude of the second leakage current of the second transistor by at about three orders of magnitude.

11. A driver circuit for controlling turn-off of a power transistor, comprising:

a switch coupled between a first reference supply node and a gate of the power transistor;

a first transistor coupled between the first reference supply node and a control terminal of said switch and having a control terminal receiving a control signal;

a second transistor coupled between the control terminal of said switch and a second reference supply node; and

wherein a control terminal of the second transistor is coupled to place the second transistor in a permanently off operational state, and where a leakage current of the permanently off second transistor exceeds the leakage current of the first transistor and is sufficient to cause a turn on of said switch when said control signal has a state configured to turn off the first transistor.

12. The driver circuit of claim 11 , wherein the leakage current of the first transistor is a drain-to-source leakage current and the leakage current of the second transistor is a drain-to-substrate leakage.

13. The driver circuit of claim 11 , wherein the second transistor is a DMOS transistor.

14. The driver circuit of claim 11 , wherein the second transistor is an NMOS transistor having a gate and a source connected together and to the second reference supply node.

15. A driver circuit for controlling turn-off of a power transistor, comprising:

a first transistor coupled between a first reference supply node and a gate of the power transistor;

a second transistor coupled between the first reference supply node and a control terminal of said first transistor and having a control terminal receiving a control signal;

a third transistor coupled between the control terminal of said first transistor and a second reference supply node, said third transistor configured in a permanently off operational state; and

wherein the third transistor is further configured to have a leakage current in the permanently off operational state which is sufficient to cause a turn on of the first transistor when said control signal has a state that is configured to turn off the second transistor.

16. The driver circuit of claim 15 , wherein the third transistor is an NMOS transistor having a gate and a source connected together and to the second reference supply node.

17. The driver circuit of claim 16 , wherein the first and second transistors are PMOS transistors.

18. The driver circuit of claim 16 , wherein the third transistor is an NDMOS transistor.

19. The driver circuit of claim 15 , wherein the leakage current of the third transistor in the permanently off operational state exceed a leakage current of the second transistor when said control signal has a state that is configured to turn off the second transistor.