Alteration of graphene defects
Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also include reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas. The methods may further include adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer. The methods may further include reducing the graphene oxide layer to produce at least one altered defect area in the layer.
1. A method for at least partially altering a defect area in a layer on a substrate, wherein the layer includes graphene, the method comprising:
placing the layer on the substrate in a chamber, wherein the layer includes at least some defect areas in the graphene, the defect areas revealing exposed areas of the substrate;
reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas;
adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer; and
reducing the graphene oxide layer to produce at least one altered defect area in the layer.
2. The method as recited in claim 1 , wherein the substrate includes at least one of plastic, SiO 2 , glass, gold, silver, and/or polyethylene terephthalate.
3. The method as recited in claim 1 , wherein the substrate includes silicon and the method further comprises reacting the substrate by applying aminopropyltriethoxysilane to the substrate.
4. The method as recited in claim 1 , wherein reacting the substrate further comprises applying an amine terminated material to the substrate.
5. The method as recited in claim 1 , wherein reacting the substrate further comprises applying an amine terminated siloxane to the substrate.
6. The method as recited in claim 1 , wherein reacting the substrate further comprises applying polyethylenimine to the substrate.
7. The method as recited in claim 1 , wherein reacting the substrate further comprises producing a corona discharge on the substrate to produce carboxylic acid functionalities on the substrate and applying polyethylenimine to the carboxylic acid functionalities.
8. The method as recited in claim 1 , wherein adhering the graphene oxide layer to the substrate further comprises applying a solution of graphene oxide and water to the substrate.
9. The method as recited in claim 1 , wherein reducing the graphene oxide layer further comprises applying a solution including hydrazine to the graphene oxide layer.
10. The method as recited in claim 1 , wherein reducing the graphene oxide further comprises applying a solution including sodium borohydride to the graphene oxide layer.